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STP26NM60ND價(jià)格

參考價(jià)格：￥18.9926

型號：STP26NM60ND 品牌：STMicroelectronics 備注：這里有STP26NM60ND多少錢，2025年最近7天走勢，今日出價(jià)，今日競價(jià)，STP26NM60ND批發(fā)/采購報(bào)價(jià)，STP26NM60ND行情走勢銷售排行榜，STP26NM60ND報(bào)價(jià)。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
STP26NM60ND

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

STP26NM60ND

isc N-Channel MOSFET Transistor

文件：320.69 Kbytes Page：2 Pages

ISC

無錫固電

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=21A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

STP26NM60ND產(chǎn)品屬性

  • 類型

    描述

  • 型號

    STP26NM60ND

  • 制造商

    STMicroelectronics

  • 功能描述

    N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Rail/Tube

  • 制造商

    STMicroelectronics

  • 功能描述

    MOSFET N-CH 600V 21A TO220

  • 制造商

    STMicroelectronics

  • 功能描述

    Single N-Channel 650 V 0.175 Ohm 190 W Through Hole Power Mosfet - TO-220-3

  • 制造商

    STMicroelectronics

  • 功能描述

    N-channel 600 V, 0.144 Ohm typ., 21 A, TO-220

更新時(shí)間：2025-9-10 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價(jià)格
ST/意法
24+
NA/
3459
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
ST/意法
25+
原廠原封可拆
54685
百分百原裝現(xiàn)貨有單來談
ST
20+
TO-220
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
ST/意法
24+
TO-220
6000
全新原裝,一手貨源,全場熱賣!
ST/意法
21+
TO-220
6240
優(yōu)勢供應(yīng) 實(shí)單必成 可開增值稅13點(diǎn)
ST
25+23+
TO-220
23700
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
ST
23+
TO-220
8795
ST/意法
23+
TO-220
8000
原裝正品實(shí)單必成
ST
25+
TO-TO-220
37650
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
ST/意法
24+
TO-220
39197
鄭重承諾只做原裝進(jìn)口現(xiàn)貨

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