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STP14NM65N價(jià)格

參考價(jià)格：￥9.4388

型號(hào)：STP14NM65N 品牌：STMicroelectronics 備注：這里有STP14NM65N多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，STP14NM65N批發(fā)/采購報(bào)價(jià)，STP14NM65N行情走勢(shì)銷售排行榜，STP14NM65N報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STP14NM65N

N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description This series of devices is designed using the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the mos

STMICROELECTRONICS

意法半導(dǎo)體

STP14NM65N

MOSFET N-CH 650V 12A TO-220

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

無錫固電

N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description This series of devices is designed using the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the mos

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description This series of devices is designed using the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the mos

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.03924 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.03992 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

STP14NM65N產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    STP14NM65N

  • 功能描述

    MOSFET N-channel 650V

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-19 18:24:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST
0851+
假一賠十
10
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST
23+
TO220
6996
只做原裝正品現(xiàn)貨
ST
24+
VQFN
7850
只做原裝正品現(xiàn)貨或訂貨假一賠十!
ST全系列
25+23+
TO-220
26759
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
ST/意法
24+
TO-220
7800
全新原廠原裝正品現(xiàn)貨,低價(jià)出售,實(shí)單可談
ST
23+
2510
原廠原裝正品
ST
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
SST
原廠封裝
9800
原裝進(jìn)口公司現(xiàn)貨假一賠百
ST
24+
TO-220-3
945
ST
18+
TO-220
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票

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