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STL26NM60N價(jià)格

參考價(jià)格：￥19.0644

型號(hào)：STL26NM60N 品牌：STMICROELECTRONICS 備注：這里有STL26NM60N多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，STL26NM60N批發(fā)/采購報(bào)價(jià)，STL26NM60N行情走勢(shì)銷售排行榜，STL26NM60N報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STL26NM60N

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

STL26NM60N

N溝道600 V、0.160 Ohm典型值、19 A MDmesh(TM) II功率MOSFET，PowerFLAT(TM) 8x8 HV封裝

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=21A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

STL26NM60N產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    STL26NM60N

  • 功能描述

    MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-11 15:04:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST
24+
PowerFLAT8
39500
進(jìn)口原裝現(xiàn)貨 支持實(shí)單價(jià)優(yōu)
ADI
23+
DFN8X8
8000
只做原裝現(xiàn)貨
ST/意法半導(dǎo)體
25+
原廠封裝
10280
ST/意法
22+
DFN8X8
18500
原裝正品支持實(shí)單
ST
25+23+
QFN
26808
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
ST/意法
2450+
QFN
6540
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
ST/意法半導(dǎo)體
25+
原廠封裝
9999
ST/意法
21+
NA
12820
只做原裝,質(zhì)量保證
ST/意法
22+
N/A
6000
現(xiàn)貨,原廠原裝假一罰十!
ST
22+
4PowerFlat? HV
9000
原廠渠道,現(xiàn)貨配單

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