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N-channel 600 V, 0.175 typ., 15 A, MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N溝道600 V、0.175 Ohm典型值、15 A MDmesh M6功率MOSFET，PowerFLAT 8x8 HV封裝

N-Channel MOSFET

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.19Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

N-channel 600 V, 162 m typ., 17 A, MDmeshTM M6 Power MOSFET in a TO-220FP package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N-channel 600 V, 162 m typ., 17 A, MDmesh? M6 Power MOSFET in an I2PAK package

Features ? Reduced switching losses ? Lower RDS(on) per area vs previous generation ? Low gate input resistance ? 100 avalanche tested ? Zener-protected Description The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N-channel 600 V, 162 m廓 typ., 17 A, MDmesh??M6 Power MOSFET in a D?PAK

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