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STFI26NM60N價格

參考價格：￥16.0083

型號：STFI26NM60N 品牌：STMicroelectronics 備注：這里有STFI26NM60N多少錢，2025年最近7天走勢，今日出價，今日競價，STFI26NM60N批發(fā)/采購報價，STFI26NM60N行情走勢銷售排行榜，STFI26NM60N報價。
型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STFI26NM60N

N-channel 600 V, 0.135, 20 A MDmesh II Power MOSFET in PAKFP package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

STFI26NM60N

N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in an I2PAKFP package

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=21A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

更新時間：2025-9-11 14:57:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ST
25+23+
TO-262
14993
絕對原裝正品全新進口深圳現(xiàn)貨
ST
25+
TO-TO-220F
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
ST
22+
TO2623
9000
原廠渠道,現(xiàn)貨配單
ST/意法
24+
NA/
80
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
ST
23+
TO-262
16900
正規(guī)渠道,只有原裝!
ST(意法半導(dǎo)體)
24+
TO-281
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
ST/意法
24+
TO-262
60000
全新原裝現(xiàn)貨
ST
2405+
原廠封裝
50000
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83268783鄒小姐
ST
2511
TO-262
16900
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價
ST
25+
TO-262
16900
原裝，請咨詢

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