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N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.22? - 9A IPAK/DPAK POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.22 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTER

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

N-Channel 100-V (D-S) MOSFET

文件：1.05699 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

POWER MOSFET 9 AMPS, 100 VOLTS

文件：113.31 Kbytes Page：12 Pages

POWER MOSFET 9 AMPS, 100 VOLTS

文件：113.31 Kbytes Page：12 Pages

100V N-Channel MOSFET

文件：421.38 Kbytes Page：8 Pages