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SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

40.0 AMPS. Schottky Barrier Rectifiers

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40.0 AMPS. Schottky Barrier Rectifiers

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Dual Common Cathode Schottky Rectifier

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40.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

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SCHOTTKY BARRIER RECTIFIER

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Schottky Barrier Recitifiers

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封裝/外殼：TO-247-3 包裝：管件 描述：DIODE ARRAY SCHOTTKY 100V TO247 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列

封裝/外殼：TO-247-3 包裝：管件 描述：DIODE ARRAY SCHOTTKY 100V TO247 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列

Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3μH to 330μH ■ Surface Mounting

Active Optical Cable QSFP 40Gbps, 100m, MSA Compatible

Features ? Full-Duplex 4 channel parallel active optical cable, supporting 42 Gbps links ? Up to 10.5 Gbps Data rate per channel ? Maximum link length of 100m available ? High Reliability 850nm VCSEL technology ? Electrically hot-puggable ? Electrical interface compliant to SFF-8431 ? Case

CMOS 32-Stage Static Left/Right Shift Register

Description CD40100BMS is a 32-Stage shift register containing 32 D-type master-slave flip-flops. The data present at the SHIFT RIGHT INPUT is transferred into the first register stage synchronously with the positive CLOCK edge, provided the LEFT/RIGHT CONTROL is at a low level, the RECIRCUL

100 W, DC - 3.0 GHz, 50 V, GaN HEMT

Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high g

Toroidal Surface Mount Inductors

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