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SPP12N50C3價(jià)格

參考價(jià)格：￥6.9491

型號：SPP12N50C3XKSA1 品牌：Infineon 備注：這里有SPP12N50C3多少錢，2025年最近7天走勢，今日出價(jià)，今日競價(jià)，SPP12N50C3批發(fā)/采購報(bào)價(jià)，SPP12N50C3行情走勢銷售排行榜，SPP12N50C3報(bào)價(jià)。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
SPP12N50C3

Cool MOS??Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Infineon

英飛凌

SPP12N50C3

N-Channel MOSFET Transistor

? DESCRITION ? New revolutionary high voltage technology ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.6? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance an

ISC

無錫固電

SPP12N50C3

N-Channel 650 V (D-S) MOSFET

FEATURES ? Reduced trr, Qrr, and IRRM ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Low switching losses due to reduced Qrr ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS)

VBSEMI

微碧半導(dǎo)體

SPP12N50C3

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：644.87 Kbytes Page：14 Pages

Infineon

英飛凌

SPP12N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：2.01852 Mbytes Page：14 Pages

Infineon

英飛凌

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：2.01852 Mbytes Page：14 Pages

Infineon

英飛凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：644.87 Kbytes Page：14 Pages

Infineon

英飛凌

Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target applications

Infineon

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? New revolutionary high voltage technology ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.6? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance an

ISC

無錫固電

N-Channel MOSFET Transistor

? DESCRITION ? New revolutionary high voltage technology ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.6? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance an

ISC

無錫固電

isc N-Channel MOSFET Transistor

? DESCRITION ? Improved Transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤380m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

無錫固電

N-Channel 650 V (D-S) MOSFET

文件：1.03243 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

SPP12N50C3產(chǎn)品屬性

  • 類型

    描述

  • 型號

    SPP12N50C3

  • 功能描述

    MOSFET COOL MOS N-CH 560V 11.6A

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-10 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價(jià)格
INFINEON/英飛凌
24+
NA/
17138
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
INF
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
INFINEON
21+
TO-220鐵頭
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
infineon technologies
23+
NA
25987
原裝現(xiàn)貨 庫存特價(jià)/長期供應(yīng)元器件代理經(jīng)銷
INFINEON
23+
TO-220
5000
專做原裝正品,假一罰百!
INFINEON
23+
TO220
2516
原廠原裝正品
INFINEON
25+23+
TO220
34624
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
INFINEON
24+
TO-220鐵頭
8500
原廠原包原裝公司現(xiàn)貨,假一賠十,低價(jià)出售
INFINEON
23+
T0-220
7936
INFINEON
22+
TO-220
38218
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢

SPP12N50C3芯片相關(guān)品牌

SPP12N50C3規(guī)格書下載地址

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