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SPD價格

參考價格：￥2.4522

型號：SPD01N60C3 品牌：Infineon 備注：這里有SPD多少錢，2025年最近7天走勢，今日出價，今日競價，SPD批發(fā)/采購報價，SPD行情走勢銷售排行榜，SPD報價。

型號	功能描述	生產(chǎn)廠家&企業(yè)
SPD	Over Voltage & Under Voltage Cut-Off With Surge Protection Device OVCDFeatures ?ExtendsTheLifeOfYourFixtureByEliminating TemporaryOver/UnderVoltagesthatCan HarmSensitiveElectronicComponents ?Over6,000OperationsPerProductLifetime ?SafeRestore? -30SecondDelayonPower-Up -InstantDroponOver/UnderVoltageCondition -30SecondDel	ABLEPOWERPRODUCTS ABLE Power Products
SPD	C to Ku Band Mixer, Detector, Modulator Applications Features ?Verysmall-sizedceramicpackage ?Lessparasiticcomponents,conversionloss ?Manytypes:5singletypes,10integratedtypes	SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會社
SPD	20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER Features: ?FastRecovery:120nsecmaximum ?LowReverseLeakageCurrent ?SingleChipConstruction ?PIVto400V ?HermeticallySealed ?HighSurgeRating ?LowThermalResistance ?HigherVoltageDevicesAvailable–ContactFactory ?ForReversePolarityAddSuffix“R” ?Replacementfor	SSDI Solid States Devices, Inc
SPD	Compact, High-Performance String Pot Dual Ouput to 50 文件：939.34 Kbytes Page：4 Pages	TECTE Connectivity Ltd 泰科電子泰科電子有限公司
SPD01N60C3	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD01N60C3	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD01N60C3	N-Channel 650 V (D-S) MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司
SPD02N50C3	Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD02N50C3	N-Channel MOSFET Transistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD02N50C3	Power MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司
SPD02N60	SIPMO Power Transistor SIPMOS?PowerTransistor ?N-Channel ?Enhancementmode ?Avalancherated	SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司
SPD02N60C3	Cool MOS Power Transistor CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD02N60C3	N-Channel MOSFET Transistor ?DESCRITION ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD02N60C3	N-Channel 650 V (D-S) MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司
SPD02N60S5	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapp	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD02N60S5	N-Channel MOSFET Transistor ?DESCRITION ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD02N80C3	N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤2.7? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD02N80C3	CoolMOS Power Transistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD03N50C3	Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant;availableHalogenfreemoldcompounda) ?Qualifiedaccording	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD03N50C3	N-Channel MOSFET Transistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD03N60C3	Cool MOS Power Transistor CoolMOS?PowerTransistor Features ?Newrevolutioanaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplaing;RoHScompliant ?QualifiedaccordingtoJEDECfortar	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD03N60C3	N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD03N60S5	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD03N60S5	N-Channel MOSFET Transistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD04N50C3	Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD04N50C3	N-Channel MOSFET Transistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.95? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD04N60C2	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvednoiseimmunity	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD04N60C3	Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD04N60C3	N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.95? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD04N60S5	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD04N60S5	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD04N80C3	N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD04N80C3	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD-060	60W, Single Output Adapter [SUNPOWERTECHNOLOGYCORP.] Features: ＊UniversalACinput88~264VAC ＊Lowripplenoise ＊Overload,overvoltage&shortcircuitprotection ＊ACinletIEC320C14 ＊Singleoutputmodelsnonminloadrequirement ＊10050℃burn-intest ＊UL,cUL,TUV,CB,CEstandard ＊1yearswa	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商
SPD06N60C3	N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD06N60C3	CoolMOS Power Transistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Highpeakcurrentcapability ?Ultraloweffectivecapacitances ?Extremedv/dtrated ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant availableinHalogenfreem	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD06N80C3	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD06N80C3	N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.9? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD07N20	SIPMOS Power Transistor Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD07N20G	N-Channel MOSFET Transistor ?DESCRITION ?Idealforhigh-frequencyswitchingandsynchronousrectification ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD07N20G	N-Channel 200 V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司
SPD07N60C2	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-251andTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvednoiseimmunity	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD07N60C3	Cool MOS Power Transistor CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-251andTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;Rohscom	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD07N60C3	N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD07N60S5	Cool MOS??Power Transistor CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-251andTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHS	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD0801	1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable	SSDI Solid States Devices, Inc
SPD0802	2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: ?PIVto100Volts ?ExtremelyLowForwardVoltageDrop ?LowReverseLeakageCurrent ?HighSurgeCapacity ?HV/Replacementfor1N5817-1N5819Series ?HermeticallySealed ?TX,TXV,andSpaceLevelScreeningAvailable2/ ?CategoryIIImetallurgicalbondperMILPRF19500appen	SSDI Solid States Devices, Inc
SPD0802SMS	2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: ?PIVto100Volts ?ExtremelyLowForwardVoltageDrop ?LowReverseLeakageCurrent ?HighSurgeCapacity ?HV/Replacementfor1N5817-1N5819Series ?HermeticallySealed ?TX,TXV,andSpaceLevelScreeningAvailable2/ ?CategoryIIImetallurgicalbondperMILPRF19500appen	SSDI Solid States Devices, Inc
SPD08N05L	SIPMOS-R POWER TRANSISTOR Features ?Nchannel ?Enhancementmode ?Avalancherated ?LogicLevel ?dv/dtrated ?175?Coperatingtemperature	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD08N10	SIPMOS Power Transistor Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD08N50C3	Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant;availableinHalogenfreem	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD08N50C3	N-Channel MOSFET Transistor ?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤600m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
SPD0901	1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable	SSDI Solid States Devices, Inc
SPD0902	2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: ?PIVto100Volts ?ExtremelyLowForwardVoltageDrop ?LowReverseLeakageCurrent ?HighSurgeCapacity ?HV/Replacementfor1N5817-1N5819Series ?HermeticallySealed ?TX,TXV,andSpaceLevelScreeningAvailable2/ ?CategoryIIImetallurgicalbondperMILPRF19500appen	SSDI Solid States Devices, Inc
SPD0902SMS	2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: ?PIVto100Volts ?ExtremelyLowForwardVoltageDrop ?LowReverseLeakageCurrent ?HighSurgeCapacity ?HV/Replacementfor1N5817-1N5819Series ?HermeticallySealed ?TX,TXV,andSpaceLevelScreeningAvailable2/ ?CategoryIIImetallurgicalbondperMILPRF19500appen	SSDI Solid States Devices, Inc
SPD09N05	SIPMOS PowerTransistor Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated ?175?Coperatingtemperature	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD09P06PLG	SIPMOS Power-Transistor Feature ?P-Channel ?Enhancementmode ?LogicLevelprueb ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?P-channel ?Enhancementmode ?LogicLevel ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Pb-freeleadplating;RoHScompliant °Qualifiedaccord	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司
SPD09P06PLG	P-channel Enhancement Mode Power MOSFET Features VDS=-60V,ID=-30A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司
SPD1001	1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable	SSDI Solid States Devices, Inc
SPD1002	2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: ?PIVto100Volts ?ExtremelyLowForwardVoltageDrop ?LowReverseLeakageCurrent ?HighSurgeCapacity ?HV/Replacementfor1N5817-1N5819Series ?HermeticallySealed ?TX,TXV,andSpaceLevelScreeningAvailable2/ ?CategoryIIImetallurgicalbondperMILPRF19500appen	SSDI Solid States Devices, Inc

SPD產(chǎn)品屬性

類型
描述
型號
SPD
制造商
SANYO
制造商全稱
Sanyo Semicon Device
功能描述
C to Ku Band Mixer, Detector, Modulator Applications

SPD供應(yīng)商更多...

更新時間：2025-7-13 23:34:00

IC供應(yīng)商	芯片型號	品牌	批號	封裝	庫存	備注	價格
深圳市富利微電子科技有限公司	SPD07N60S5A	INFINEON/英飛凌	24+	TO-252	30000	房間原裝現(xiàn)貨特價熱賣,有單詳談	詢價
深圳市高捷芯城科技有限公司	SPD35N10	Infineon(英飛凌)	24+	標(biāo)準(zhǔn)封裝	7485	原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。	詢價
深圳市得捷芯城科技有限公司	SPD5118-Y1B000NCG8	Renesas(瑞薩)	24+	NA/	8735	原廠直銷,現(xiàn)貨供應(yīng),賬期支持!	詢價
深圳市納艾斯科技有限公司	SPD08P06PG	INFINEON/英飛凌	24+	NA	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價
深圳市科芯源微電子有限公司	SPD02N60C3	INFINEON/英飛凌	25+	TO252	54648	百分百原裝現(xiàn)貨實單必成歡迎詢價	詢價
深圳市金芯世紀(jì)電子有限公司	SPD08P06PG	INFINEON/英飛凌	22+	TO-252	100000	代理渠道/只做原裝/可含稅	詢價
深圳市華斯頓科技有限公司	SPD08P06PG	INFINEON	25+23+	TO-252	41577	絕對原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價
深圳市華睿芯科技有限公司	SPD30P06PG	Infineon	24+	TO-252	20000	全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！	詢價
深圳市富達(dá)微科技有限公司	SPD30P06PGBTMA1	盒包INEINEON	24+	TO-252	8000	原裝，正品	詢價
深圳市弘揚(yáng)芯城科技有限公司	SPD9103W	TECH PUBLIC(臺舟)	2024+	SOD-323	500000	誠信服務(wù),絕對原裝原盤	詢價

SPD芯片相關(guān)品牌

SPD規(guī)格書下載地址

SPD參數(shù)引腳圖相關(guān)

t680
t5007
t5006
t4242
t40
t2222
t2010
t100k
sw-262
stm32f103
stm32
stk
stc89c52rc
stc12c5a60s2
st70
st18
sst25vf040
sr2m
spwm
spice模型
SPD1511
SPD127
SPD125R
SPD125
SPD-121
SPD1194
SPD1192
SPD100G
SPD1002
SPD1001
SPD0902
SPD0901
SPD0802
SPD0801
SPD-060
SPD04P10PLG
SPD04P10PG
SPD04N80C3=HI1
SPD04N80C3
SPD04N60S5BTMA1
SPD04N60S5
SPD04N60C3
SPD04N50C3
SPD03N60C3BTMA1
SPD03N60C3
SPD03N50C3
SPD03505
SPD030G
SPD02N80C3BTMA1
SPD02N80C3
SPD02N60S5
SPD02N60C3
SPD02N50C3BTMA1
SPD02N50C3
SPD024435
SPD01N60C3
SPD015G
SPD015A
SPD014A
SPD005G
SPCWV
SPCWK
SPCT-10
SPCRV
SPCR02A
SPCMB4
SPCB00790-5-RMM-915L
SPC-AD201ECK
SPC8P-222
SPC8P-204
SPC81A1
SPC81A
SPC817M
SPC817
SPC815M
SPC815
SPC814M
SPC814
SPC717M
SPC717
SPC715M
SPC715
SPC714M
SPC714
SPC7040
SPC7030
SPC7.3472K400K35TR12
SPC61
SPC5-UDESTK-EVAL
SPC5-UDEDEBG-TL
SPC5-HTCOMP-NLTL
SPC56XXMB
SPC56EL70L5CBFR
SPC56EL60L5CCOSR
SPC56EL60L5CBFQR
SPC5675KFF0VMS2
SPC5675KFF0MMS2
SPC5674FF3MVY3
SPC5674FF3MVV3
SPC5668EK0MMG

SPD數(shù)據(jù)表相關(guān)新聞

SPD127R-105M
SPD127R-105M
2023-4-28
SPC5748GHK0AMKU6
SPC5748GHK0AMKU6,LQFP-176,UltrareliableMCUwithvastperipherals,3cores,securitymodule,6MBFlash,768kRAM,
2022-8-25
SPC574K72E5C6FAR
SPC574K72E5C6FAR
2022-7-8
SPC7011F-C6-TE3 原裝現(xiàn)貨假一賠十熱賣中
保證最優(yōu)惠的價格，薄利多銷為經(jīng)營理念;_服務(wù):最快捷的交貨方式，貨品均有30天質(zhì)量保證
2020-4-15
SpeedMezz連接器系列1733000106
MolexSpeedMezz連接器系列提供了薄型、小尺寸和靈活設(shè)計的夾層解決方案
2019-10-21
SPD30P06PG天芯科技優(yōu)勢渠道積累-貨源穩(wěn)定-價格優(yōu)勢
深圳市天芯半導(dǎo)體科技有限公司0755-8272566018128853661（微信75056055）QQ：177691499
2019-6-18

DdatasheetPDF頁碼索引

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SPD價格

SPD產(chǎn)品屬性

SPD芯片相關(guān)品牌

SPD規(guī)格書下載地址

SPD參數(shù)引腳圖相關(guān)

SPD數(shù)據(jù)表相關(guān)新聞

DdatasheetPDF頁碼索引

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