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型號 功能描述 生產廠家&企業(yè) LOGO 操作
SIHFR9310T

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世科技威世科技半導體

SIHFR9310T

Power MOSFET

文件：3.34757 Mbytes Page：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世科技威世科技半導體

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世科技威世科技半導體

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世科技威世科技半導體

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世科技威世科技半導體

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

文件：3.34757 Mbytes Page：7 Pages

KERSEMI

Power MOSFET

文件：3.34757 Mbytes Page：7 Pages

KERSEMI

Power MOSFET

文件：3.34757 Mbytes Page：7 Pages

KERSEMI

Power MOSFET

文件：3.34757 Mbytes Page：7 Pages

KERSEMI

Power MOSFET

文件：267.35 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技威世科技半導體

Power MOSFET

文件：267.35 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技威世科技半導體

Power MOSFET

文件：267.35 Kbytes Page：13 Pages

VishayVishay Siliconix

威世科技威世科技半導體

50 Ohm, RG58, 20 AWG

Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond? II + tinned copper braid shield (55% coverage), PVC jacket.

BELDEN

百通

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

HeycoHeyco.

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MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

KEYSTONE

Keystone Electronics Corp.

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

HeycoHeyco.

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Infra-Red Wavelength

文件：112.83 Kbytes Page：6 Pages

AVAGO

安華高

SIHFR9310T產品屬性

  • 類型

    描述

  • 型號

    SIHFR9310T

  • 制造商

    VISHAY

  • 制造商全稱

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新時間：2025-9-7 23:01:00
IC供應商 芯片型號 品牌 批號 封裝 庫存 備注 價格
VISHAY/威世
24+
NA/
28800
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
VISHAY/威世
22+
SOT-252
100000
代理渠道/只做原裝/可含稅
VISHAY/威世
23+
SOT252
7000
Vishay
20+
TO-263
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
VISHAY/威世
TO-252
22+
6000
十年配單,只做原裝
Vishay / Siliconix
2025+
TO-252-3
56303
NK/南科功率
2025+
TO-252
986966
國產
VISHAY/威世
23+
TO-252
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
VISHAY/威世
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
VISHAY/威世
24+
TO-252
30000
只做正品原裝現(xiàn)貨

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