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| 型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
SIHF9Z34 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 |   | |
SIHF9Z34 | Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | KERSEMI | | |
SIHF9Z34 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET FEATURES ? Advanced process technology ? Surface mount (IRF9Z34S, SiHF9Z34S) ? 175 °C operating temperature ? Fast switching ? P-channel ? Fully avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides in | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET 文件：204.41 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET 文件：204.41 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
Power MOSFET 文件：204.41 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | | ||
AUTOMOTIVE GRADE Advanced Planar Technology Description Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power | IRF | | ||
Advanced Planar Technology Features ? Advanced Planar Technology ? P-Channel MOSFET ? Dynamic dV/dT Rating ? 175°C Operating Temperature ? Fast Switching ? Fully Avalanche Rated ? Repetitive Avalanche Allowed up to Tjmax ? Lead-Free, RoHS Compliant ? Automotive Qualified* | KERSEMI | | ||
Advanced Process Technology Coming Soon. If you have some information on related parts, please share useful information by adding links below. | IRF | | ||
Mini size of Discrete semiconductor elements 文件：468.13 Kbytes Page：10 Pages | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | | ||
P-Channel MOSFET Transistor 文件：335.54 Kbytes Page：2 Pages | ISC 無(wú)錫固電 | |
SIHF9Z34產(chǎn)品屬性
- 類型
描述
- 型號(hào)
SIHF9Z34
- 制造商
VISHAY
- 制造商全稱
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
21000 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
|||
VISHAY |
原廠封裝 |
9800 |
原裝進(jìn)口公司現(xiàn)貨假一賠百 |
||||
VIS |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
|||
Vishay |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
|||
VISHAY/威世通 |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
|||
VISHAY |
21+ |
TO263 |
10020 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
36180 |
原廠代理 終端免費(fèi)提供樣品 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
國(guó)產(chǎn) |
|||
VISHAY/威世 |
23+ |
TO-263 |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
|||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
SIHF9Z34芯片相關(guān)品牌
SIHF9Z34規(guī)格書(shū)下載地址
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SIHF9Z34數(shù)據(jù)表相關(guān)新聞
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進(jìn)口代理
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煥盛達(dá)竭誠(chéng)為廣大客戶提供一站式配套服務(wù)，解決您的BOM表采購(gòu)之痛，讓您采購(gòu)無(wú)憂！
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2020-12-4SIHG47N65E-GE3場(chǎng)效管MOS原裝現(xiàn)貨
煥盛達(dá)竭誠(chéng)為廣大客戶提供一站式配套服務(wù)，解決您的BOM表采購(gòu)之痛，讓您采購(gòu)無(wú)憂！
2020-12-3SiGeMMIC放大器QPA4263C原裝現(xiàn)貨
深圳市大唐盛世半導(dǎo)體有限公司 手 機(jī)：17727572380 。 電 話：0755-83226739 Q Q:626839837。 微信號(hào)：15096137729
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深圳市大唐盛世半導(dǎo)體有限公司 手 機(jī)：17727572380 。 電 話：0755-83226739 Q Q:626839837。 微信號(hào)：15096137729
2019-12-7
DdatasheetPDF頁(yè)碼索引
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