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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
SGW15N60

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology ? 75 lower Eoff compared to previous generation combined with low conduction losses ? Short circuit withstand time – 10 μs ? Designed for: - Motor controls - Inverter ? NPT-Technology for 600V applications offers: - very tight parameter distribution

Infineon

英飛凌

SGW15N60

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology ? 75 lower Eoff compared to previous generation combined with low conduction losses ? Short circuit withstand time – 10 μs ? Designed for: - Motor controls - Inverter ? NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

Infineon

英飛凌

SGW15N60

Short Circuit Rated IGBT

文件：557.14 Kbytes Page：7 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW15N60

Fast IGBT in NPT-technology

Infineon

英飛凌

封裝/外殼：TO-247-3 包裝：管件 描述：IGBT 600V 31A 139W TO247-3 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單

Infineon

英飛凌

Short Circuit Rated IGBT

文件：557.14 Kbytes Page：7 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

UTC

友順

15A, 600V N-CHANNEL POWER MOSFET

文件：185.37 Kbytes Page：6 Pages

UTC

友順

High Switching Speed

文件：49.33 Kbytes Page：2 Pages

ISC

無(wú)錫固電

N-Channel 650V (D-S) Power MOSFET

文件：1.0671 Mbytes Page：9 Pages

VBSEMI

微碧半導(dǎo)體

CoolMOS Power Transistor

文件：543.38 Kbytes Page：12 Pages

Infineon

英飛凌

SGW15N60產(chǎn)品屬性

  • 類(lèi)型

    描述

  • 型號(hào)

    SGW15N60

  • 功能描述

    IGBT 晶體管 FAST IGBT NPT TECH 600V 15A

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集電極—發(fā)射極最大電壓

  • VCEO

    650 V

  • 集電極—射極飽和電壓

    2.3 V

  • 柵極/發(fā)射極最大電壓

    20 V 在25

  • C的連續(xù)集電極電流

    150 A

  • 柵極—射極漏泄電流

    400 nA

  • 功率耗散

    187 W

  • 封裝/箱體

    TO-247

  • 封裝

    Tube

更新時(shí)間：2025-9-20 13:36:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
INFINEON
24+
TO-247
8500
原廠原包原裝公司現(xiàn)貨,假一賠十,低價(jià)出售
INFINEON/英飛凌
24+
PG-TO247-3
60000
全新原裝現(xiàn)貨
Infineon
19+
PG-TO247-3
30000
INF
24+
60
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
INFINEON
20+
PG-TO247-3
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
INFINEON/英飛凌
25+
PBFREE
880000
明嘉萊只做原裝正品現(xiàn)貨
INFINEON/英飛凌
22+
TO-247
15000
英飛凌MOS管、IGBT大量有貨
ADI
23+
PG-TO247-3
8000
只做原裝現(xiàn)貨
INFINEON/英飛凌
2447
TO-247
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨

SGW15N60芯片相關(guān)品牌

SGW15N60規(guī)格書(shū)下載地址

SGW15N60參數(shù)引腳圖相關(guān)

SGW15N60數(shù)據(jù)表相關(guān)新聞

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