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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
SBRD81035CTLG

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

ONSEMI

安森美半導(dǎo)體

SBRD81035CTLG

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

ONSEMI

安森美半導(dǎo)體

SBRD81035CTLG

封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：散裝 描述：DIODE SCHOTTKY 35V 10A DPAK 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列

ONSEMI

安森美半導(dǎo)體

SBRD81035CTLG

Switch-mode Schottky Power Rectifier

ONSEMI

安森美半導(dǎo)體

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

ONSEMI

安森美半導(dǎo)體

封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：卷帶（TR） 描述：DIODE SCHOTTKY 35V 10A DPAK 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列

ONSEMI

安森美半導(dǎo)體

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

ONSEMI

安森美半導(dǎo)體

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES: ? Input matching ? Emitter site Ballasted. ? PG = 10 dB at 35 W/1150 MHz ? Omnigold? Metalization System

ASI

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein.

STMICROELECTRONICS

意法半導(dǎo)體

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP of fers improved saturated ouput power and collector efficiency based on the test circuit described he

STMICROELECTRONICS

意法半導(dǎo)體

更新時(shí)間：2025-9-22 9:13:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
onsemi
21+
5990
只做原裝,優(yōu)勢(shì)渠道 ,歡迎實(shí)單聯(lián)系
ON/安森美
22+
N/A
5990
現(xiàn)貨,原廠原裝假一罰十!
24+
N/A
73000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
ONN
2405+
原廠封裝
1990
只做原裝優(yōu)勢(shì)現(xiàn)貨庫(kù)存 渠道可追溯
ON Semiconductor
23+
DPAK
7000
ON/安森美
22+
NA
3000
可訂貨 請(qǐng)確認(rèn)
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
5000
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品
onsemi(安森美)
24+
TO252
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
ON/安森美
25+
TO-252
860000
明嘉萊只做原裝正品現(xiàn)貨
ON
2023+
TO-252
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。

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