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S9013晶體管資料
S9013別名：S9013三極管、S9013晶體管、S9013晶體三極管
S9013生產(chǎn)廠家：
S9013制作材料：Si-N/P
S9013性質(zhì)：低頻或音頻放大 （LF）
S9013封裝形式：直插封裝
S9013極限工作電壓：40V
S9013最大電流允許值：0.1A
S9013最大工作頻率：<1MHZ或未知
S9013引腳數(shù)：3
S9013最大耗散功率：0.5W
S9013放大倍數(shù)：
S9013圖片代號(hào)：A-20
S9013vtest：40
S9013htest：999900
- S9013atest：0.1
S9013wtest：0.5
S9013代換 S9013用什么型號(hào)代替：
S9013價(jià)格
參考價(jià)格：￥0.0600
型號(hào)：S9013 品牌：JXK 備注：這里有S9013多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，S9013批發(fā)/采購(gòu)報(bào)價(jià)，S9013行情走勢(shì)銷售排行榜，S9013報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
S9013 | 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. ? High total power dissipation. (PT=625mW) ? High Collector Current. (IC=500mA) ? Complementary to SS9012 ? Excellent hFE linearity. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |   | |
S9013 | PLASTIC ENCAPSULATE TRANSISTORS [SHENZHEN SLS TECHNOLOGY CO.,LTD.] Features: PC and IC are larger, hFE linearity is good; Applications: Used in power amplifier circuit, complementary to S9012. | ETCList of Unclassifed Manufacturers 未分類制造商 | | |
S9013 | NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFELinearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current. | BILIN 銀河微電 | | |
S9013 | TRANSISTOR(NPN) TRANSISTOR (NPN) FEATURES ● Complementary to S9012 ● Excellent hFE linearity | HTSEMI 金譽(yù)半導(dǎo)體 | | |
S9013 | TO-92 Plastic-Encapsulate Transistors FEATURE Complementary to S9012 Excellent hFE linearity | DAYA 大亞電器集團(tuán) | | |
S9013 | NPN EPITAXIAL PLANAR TRANSISTOR Description The S9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features ?High Total Power Dissipation. (PT:625mW) ?High Collector Current. (IC:500mA) ? Complementary to S9012 ? Excellent linearity. | TGS | | |
S9013 | General Purpose Transistor FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | |
S9013 | NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current. | DSK | | |
S9013 | NPN SILICON EPITAXIAL PLANAR TRANSISTOR Features ? High Collector Current.(IC= 500mA） ? Complementary To S9012. ? Excellent HFE Linearity. ? Power dissipation.(PC=300mW) | SUNMATE 森美特 | | |
S9013 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High Collector Current. ● Complementary to S9012. ● Excellent hFE Linearity. | JIANGSU 長(zhǎng)電科技 | | |
S9013 | TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
S9013 | NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 | DGNJDZ 南晶電子 | | |
S9013 | Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors FEATURES Complimentary to S9012 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | | |
S9013 | NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current. | LUGUANG 魯光電子 | | |
S9013 | NPN Transistors Features ● Excellent hFE linearity ● Collector Current :IC=0.5A | YFWDIODE 佑風(fēng)微電子 | | |
S9013 | Power dissipation FEATURE Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | | |
S9013 | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1W output amplifier of portable radios in class B push-pull operation. | DCCOM | | |
S9013 | NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current. | LEIDITECH 雷卯電子 | | |
S9013 | SOT-23 Plastic-Encapsulate Transistors FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity. | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | | |
S9013 | TRANSISTOR(NPN) FEATURES Complementary to S9012 Excellent hFE linearity | GWSEMI 唯圣電子 | | |
S9013 | TRANSISTOR (NPN) FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity. | SY 順燁電子 | | |
S9013 | Plastic-Encapsulate Transistors 文件：661.49 Kbytes Page：4 Pages | LEIDITECH 雷卯電子 | | |
S9013 | General Purpose Transistor 文件：349.4 Kbytes Page：1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | |
S9013 | NPN General purpose Amplifier 文件：1.28766 Mbytes Page：5 Pages | JINGHENG 晶恒 | | |
S9013 | NPN Silicon Epitaxial Planar Transistor 文件：220 Kbytes Page：4 Pages | BILIN 銀河微電 | | |
S9013 | Plastic-Encapsulate Transistors 文件：650.57 Kbytes Page：2 Pages | SHENZHENSLS 三聯(lián)盛 | | |
S9013 | TRANSISTOR (NPN) 文件：245.93 Kbytes Page：2 Pages | KOOCHIN 灝展電子 | | |
S9013 | NPN Silicon Transistor 文件：87.63 Kbytes Page：3 Pages | AUK | | |
NPN Silicon Transistors Features ? TO-92 Plastic-Encapsulate Transistors ? Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. ? Collector-current 0.5A ? Collector-base Voltage 40V ? Operating and storage junction temperature range: -55℃ to +150℃ ? Marking Code: S9013 ? Lead Free Finish/RoHS Compliant (P Suffix | MCC | | ||
NPN Silicon Transistors Features ? TO-92 Plastic-Encapsulate Transistors ? Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. ? Collector-current 0.5A ? Collector-base Voltage 40V ? Operating and storage junction temperature range: -55℃ to +150℃ ? Marking Code: S9013 ? Lead Free Finish/RoHS Compliant (P Suffix | MCC | | ||
NPN Silicon Transistors Features ? TO-92 Plastic-Encapsulate Transistors ? Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. ? Collector-current 0.5A ? Collector-base Voltage 40V ? Operating and storage junction temperature range: -55℃ to +150℃ ? Marking Code: S9013 ? Lead Free Finish/RoHS Compliant (P Suffix | MCC | | ||
NPN Silicon Transistors Features ? TO-92 Plastic-Encapsulate Transistors ? Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. ? Collector-current 0.5A ? Collector-base Voltage 40V ? Operating and storage junction temperature range: -55℃ to +150℃ ? Marking Code: S9013 ? Lead Free Finish/RoHS Compliant (P Suffix | MCC | | ||
NPN Transistors Features ● Excellent hFE linearity ● Collector Current :IC=0.5A | YFWDIODE 佑風(fēng)微電子 | | ||
NPN Silicon Transistors Features ? TO-92 Plastic-Encapsulate Transistors ? Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. ? Collector-current 0.5A ? Collector-base Voltage 40V ? Operating and storage junction temperature range: -55℃ to +150℃ ? Marking Code: S9013 ? Lead Free Finish/RoHS Compliant (P Suffix | MCC | | ||
NPN Silicon Transistors Features ? TO-92 Plastic-Encapsulate Transistors ? Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. ? Collector-current 0.5A ? Collector-base Voltage 40V ? Operating and storage junction temperature range: -55℃ to +150℃ ? Marking Code: S9013 ? Lead Free Finish/RoHS Compliant (P Suffix | MCC | | ||
NPN Silicon Transistors Features ? TO-92 Plastic-Encapsulate Transistors ? Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. ? Collector-current 0.5A ? Collector-base Voltage 40V ? Operating and storage junction temperature range: -55℃ to +150℃ ? Marking Code: S9013 ? Lead Free Finish/RoHS Compliant (P Suffix | MCC | | ||
NPN Transistors Features ● Excellent hFE linearity ● Collector Current :IC=0.5A | YFWDIODE 佑風(fēng)微電子 | | ||
NPN Transistors Features ● Excellent hFE linearity ● Collector Current :IC=0.5A | YFWDIODE 佑風(fēng)微電子 | | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.3 W (Tamb=25°C) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBOP 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C | ETCList of Unclassifed Manufacturers 未分類制造商 | | ||
NPN General Purpose Transistors NPN General Purpose Transistors P/b Lead(Pb)-Free | WEITRON | | ||
TRANSISTOR FEATURES High Collector Current. (IC=500mA) Complementary to S9012M Excellent hFElinearity. APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) | JIANGSU 長(zhǎng)電科技 | | ||
Plastic-Encapsulate Transistors FEATURES Complementary to S9012 Excellent hFE linearity | GWSEMI 唯圣電子 | | ||
NPN Epitaxial Silicon Transistor FEATURE Power dissipation PCM : 0.625 W Tamb=25 °C Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 °C | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High Collector Current ● Excellent HFE Linearity | JIANGSU 長(zhǎng)電科技 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PT=200mW) APPLICATIONS ● High Collector Current. | DSK | | ||
TRANSISTOR(NPN) FEATURES ● High Collector Current ● Excellent HFE Linearity | HTSEMI 金譽(yù)半導(dǎo)體 | | ||
0.5A , 40V NPN Plastic Encapsulated Transistor FEATURES ● High Collector Current ● Excellent HFE Linearity | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PT=200mW) APPLICATIONS ● High Collector Current. | BILIN 銀河微電 | | ||
SOT-323 Plastic-Encapsulate Transistors FEATURES High Collector Current Excellent HFE Linearity | DGNJDZ 南晶電子 | | ||
SOT-323 Plastic-Encapsulate Transistors TRANSISTOR( NPN ) Features ● High Collector Current ● Excellent HFE Linearity | HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司 | | ||
NPN Silicon Epitaxial Planar Transistor 文件：220 Kbytes Page：4 Pages | BILIN 銀河微電 | | ||
General Purpose Transistor 文件：349.4 Kbytes Page：1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
NPN Silicon Transistors 文件：181.88 Kbytes Page：2 Pages | MCC | | ||
封裝/外殼：TO-226-3，TO-92-3 標(biāo)準(zhǔn)主體（!--TO-226AA） 包裝：散裝 描述：TRANS NPN 25V 0.5A TO92 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | MCC | | ||
封裝/外殼：TO-226-3，TO-92-3（TO-226AA）成形引線 包裝：帶盒（TB） 描述：TRANS NPN 25V 0.5A TO92 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | MCC | | ||
NPN Transistors 文件：1.85901 Mbytes Page：3 Pages | YFWDIODE 佑風(fēng)微電子 | | ||
SOT-23 Plastic-Encapsulate Transistors 文件：2.077659 Mbytes Page：4 Pages | HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司 | | ||
NPN Epitaxial Silicon Transistor 文件：101.62 Kbytes Page：2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
Plastic-Encapsulate Transistors 文件：661.49 Kbytes Page：4 Pages | LEIDITECH 雷卯電子 | | ||
TO-92 Plastic-Encapsulate Transistors 文件：2.48587 Mbytes Page：4 Pages | HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司 | |
S9013產(chǎn)品屬性
- 類型
描述
- 型號(hào)
S9013
- 功能描述
TO-92 Plastic-Encapsulate Transistors(HAROM ELECTRONIC)
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CJ(江蘇長(zhǎng)電/長(zhǎng)晶) |
24+ |
N/A |
97048 |
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div> |
|||
TWGMC臺(tái)灣迪嘉 |
25+ |
SOT23 |
36000 |
TWGMC臺(tái)灣迪嘉原裝現(xiàn)貨S9013即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂 |
|||
國(guó)產(chǎn) |
1331 |
TO92 |
950 |
現(xiàn)貨庫(kù)存,有單來(lái)談 |
|||
中性 |
20+ |
SOP |
2960 |
誠(chéng)信交易大量庫(kù)存現(xiàn)貨 |
|||
24+ |
100 |
真實(shí)現(xiàn)貨庫(kù)存 |
|||||
BORN(伯恩半導(dǎo)體) |
24+ |
SOT-23 |
50000 |
品牌代理,價(jià)格優(yōu)勢(shì),技術(shù)支持!! |
|||
長(zhǎng)電原裝正品專賣價(jià)格 |
23+ |
SOT-23 |
680000 |
專注原裝正品現(xiàn)貨特價(jià)中量大可定 |
|||
國(guó)產(chǎn) |
24+ |
TO-92 |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
|||
CJ/長(zhǎng)電 |
2021+ |
SOT23 |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
|||
Formosa MS(美麗微) |
23+ |
N/A |
129730 |
代理渠道,價(jià)格優(yōu)勢(shì) |
S9013芯片相關(guān)品牌
S9013規(guī)格書下載地址
S9013參數(shù)引腳圖相關(guān)
- spd
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- sd200
- sc2608
- sc2262
- sanken
- sa950
- sa28
- SA2712
- SA2711
- SA2710
- SA2648
- SA2644
- SA2255
- SA2254
- SA2253
- SA1162ST
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- S979T
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- S9015-C
- S9015-B
- s9015
- S9014W
- S9014T
- S9014M
- S9014-L
- S9014-H
- S9014-D
- S9014-C
- S9014-B
- s9014
- S9013W
- S9013T
- S9013M
- S9013-L
- S9013-J
- S9013-I
- S9013-H
- S9013-G
- S9012W
- S9012T
- S9012M
- S9012LT
- S9012-L
- S9012-J
- S9012-I
- S9012-H
- S9012-G
- S9012
- S9011
- S9010
- S8XXXB
- S8xC-13
- S8X8TS2
- S8X8TS1
- S8X8TS
- S8X8ES2
- S8X8ES1
- S8X8ES
- S8VS_13
- S879T
- S876T
- S791T
- S790T
- S779T
- S763T
- S7503
- S7502
- S7310N
- S7310M
- S7310E
- S7310D
- S7310C
- S7310B
- S730T
- S691T
- S690T
S9013數(shù)據(jù)表相關(guān)新聞
S9014 TO92
常用小功率三極管包(TO-92)S9013 S9014 S8050 S8550現(xiàn)貨熱賣 元器件一站式配單
2021-12-30S9012 CJ/長(zhǎng)電 SOT-23 支持原裝長(zhǎng)電訂貨型號(hào)，歡迎咨詢！
S9012 CJ/長(zhǎng)電 SOT-23
2021-5-17S9013 SOT-23 CJ/長(zhǎng)電 NPN三極管 原裝正品
原裝正品現(xiàn)貨供應(yīng) 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-29S9012，SSF10N90A，SSF17N60A，SSF22N50A，SSF25N40A，SSF45N20A
S9012，SSF10N90A，SSF17N60A，SSF22N50A，SSF25N40A，SSF45N20A
2020-3-12S9013M
S9013M
2019-12-27S8VK-WA開關(guān)電源S8VK-WA24024
歐姆龍的S8VK-WA采用獨(dú)特的三相200 V電源，可減少設(shè)計(jì)復(fù)雜性并提高可靠性
2019-9-19
DdatasheetPDF頁(yè)碼索引
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