位置:首頁(yè) > IC中文資料第7824頁(yè) > RJU
RJU價(jià)格
參考價(jià)格:¥0.3900
型號(hào):RJU002N06 品牌:ROHM 備注:這里有RJU多少錢(qián),2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),RJU批發(fā)/采購(gòu)報(bào)價(jià),RJU行情走勢(shì)銷(xiāo)售排行榜,RJU報(bào)價(jià)。型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
RJU | Metal Oxide Resistors, Special Purpose High Power, Ultra High Value 文件:95.93 Kbytes Page:3 Pages | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | ||
1250V - 10A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.3Vtyp.(atIF=10A,Tc=25?C) ?FastRecovery(softrecovery) trr=35nstyp.(atIF=10A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 10A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.3Vtyp.(atIF=10A,Tc=25?C) ?FastRecovery(softrecovery) trr=35nstyp.(atIF=10A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 15A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.3Vtyp.(atIF=15A,Tc=25?C) ?FastRecovery(softrecovery) trr=40nstyp.(atIF=15A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 15A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.3Vtyp.(atIF=15A,Tc=25?C) ?FastRecovery(softrecovery) trr=40nstyp.(atIF=15A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 30A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=30A,Tc=25?C) ?FastRecovery(softrecovery) trr=70nstyp.(atIF=30A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 30A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=30A,Tc=25?C) ?FastRecovery(softrecovery) trr=70nstyp.(atIF=30A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 50A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=50A,Tc=25?C) ?FastRecovery(softrecovery) trr=90nstyp.(atIF=50A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 50A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=50A,Tc=25?C) ?FastRecovery(softrecovery) trr=90nstyp.(atIF=50A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 75A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=75A,Tc=25?C) ?FastRecovery(softrecovery) trr=100nstyp.(atIF=75A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 75A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=75A,Tc=25?C) ?FastRecovery(softrecovery) trr=100nstyp.(atIF=75A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 100A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=100A,Tc=25?C) ?FastRecovery(softrecovery) trr=120nstyp.(atIF=100A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 100A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=100A,Tc=25?C) ?FastRecovery(softrecovery) trr=120nstyp.(atIF=100A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 150A - Fast Recovery Diode Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=150A,Tc=25?C) ?FastRecovery(softrecovery) trr=155nstyp.(atIF=150A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 150A - Fast Recovery Diode Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=150A,Tc=25?C) ?FastRecovery(softrecovery) trr=155nstyp.(atIF=150A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 200A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=200A,Tc=25?C) ?Fastrecovery(softrecovery) trr=165nstyp.(atIF=200A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
1250V - 200A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=2.0Vtyp.(atIF=200A,Tc=25?C) ?Fastrecovery(softrecovery) trr=165nstyp.(atIF=200A,di/dt=1500A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
360V - 10A - Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
360V - 10A - Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
360V - 20A - Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
360V - 20A - Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
360V - 20A - Dual Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.1Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Dual Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.1Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
360V - 40A - Dual Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=40nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.1Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Dual Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=40nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.1Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=360V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
430V - 10A - Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=23nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=430V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
430V - 10A - Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=23nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=430V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.6Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=430V) ?Isolatedpackage:TO-220FP(2pin) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.5Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=430V) ?Isolatedpackage:TO-220FP(2pin) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=?100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=?100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Ultrafast Recovery Diode FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage ·Lowreversecurrent APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=10A,di/dt=?100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=10A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=20A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=20A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 30A - Dual Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 30A - Dual Diode Ultra Fast Recovery Diode Features ?Ultrafastreverserecoverytime:trr=25nstyp.(atIF=30A,di/dt=100A/μs) ?Lowforwardvoltage:VF=2.5Vtyp.(atIF=30A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=60nstyp.(atIF=3A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=5A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=70nstyp.(atIF=5A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=15A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=70nstyp.(atIF=5A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=15A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=90nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=90nstyp.(atIF=10A,di/dt=100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 60A - Dual Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=90nstyp.(atIF=30A,di/dt=100A/μs)perLeg ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A)perLeg ?Lowreversecurrent:IR=1μAmax.(atVR=600V)perLeg | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 60A - Dual Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=90nstyp.(atIF=30A,di/dt=100A/μs)perLeg ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=30A)perLeg ?Lowreversecurrent:IR=1μAmax.(atVR=600V)perLeg | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=?100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=?100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 50A - Single Diode Fast Recovery Diode Features ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) ?Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=?100A/?s) ?Lowreversecurrent:IR=1?Amax.(atVR=600V) ?Applications:PFC,Inverter,Converter ?Qualitygrade:Standard | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 50A - Single Diode Fast Recovery Diode Features ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) ?Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=?100A/?s) ?Lowreversecurrent:IR=1?Amax.(atVR=600V) ?Applications:PFC,Inverter,Converter ?Qualitygrade:Standard | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
Single Diode Fast Recovery Diode Features ?Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=?100A/μs) ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) ?Lowreversecurrent:IR=1μAmax.(atVR=600V) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 50A - Dual Diode Super Fast Recovery Diode Features ?Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=100A/μs)PerLeg ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A)PerLeg ?Lowreversecurrent:IR=1μAmax.(atVR=600V)PerLeg | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 50A - Dual Diode Super Fast Recovery Diode Features ?Fastreverserecoverytime:trr=100nstyp.(atIF=30A,di/dt=100A/μs)PerLeg ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A)PerLeg ?Lowreversecurrent:IR=1μAmax.(atVR=600V)PerLeg | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
600V - 50A - Single Diode Fast Recovery Diode Features ?Lowforwardvoltage:VF=1.4Vtyp.(atIF=50A) ?Fastreverserecoverytime:trr=100nstyp. (atIF=50A,di/dt=?100A/?s) ?Lowreversecurrent:IR=1?Amax.(atVR=600V) ?Applications:PFC,Inverter,Converter ?Qualitygrade:Standard | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
650V - 50A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=1.55Vtyp.(atIF=50A,Tc=25?C) ?Fastrecovery(softrecovery) trr=70nstyp.(atIF=50A,di/dt=100A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | |||
650V - 75A - Fast Recovery Diode Application: Inverter Features ?Lowforwardvoltage VF=1.7Vtyp.(atIF=75A,Tc=25?C) ?Fastrecovery(softrecovery) trr=80nstyp.(atIF=75A,di/dt=100A/?s,Tc=25?C) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 |
RJU產(chǎn)品屬性
- 類型
描述
- 型號(hào)
RJU
- 制造商
VISHAY
- 制造商全稱
Vishay Siliconix
- 功能描述
Metal Oxide Resistors, Special Purpose High Power, Ultra High Value
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ROHM |
08+PB |
SOT23 |
2900 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
|||
ROHM/羅姆 |
24+ |
NA/ |
90000 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
|||
ROHM |
24+ |
SOT323 |
20000 |
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div> |
|||
ROHM |
2016+ |
SOT323 |
12489 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
|||
ROHM/羅姆 |
25+ |
SOT-323 |
45181 |
ROHM/羅姆全新特價(jià)RJU003N03即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
ROHM |
24+ |
SOT323 |
5000 |
全新原裝正品,現(xiàn)貨銷(xiāo)售 |
|||
羅姆 |
23+ |
SOT23 |
2990 |
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
|||
RENESAS丨全系列供應(yīng) |
23+ |
NA |
5800 |
原裝進(jìn)口ICMCUSOCMOS等知名國(guó)內(nèi)外品牌只做原裝全 |
|||
ROHM |
09+ |
SOT323 |
1000 |
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
|||
ROHM/羅姆 |
1450PB |
SOT323 |
3000 |
RJU規(guī)格書(shū)下載地址
RJU參數(shù)引腳圖相關(guān)
- sa950
- sa28
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三極管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- rtl8100c
- rs觸發(fā)器
- rohs指令
- ROHS
- RK1-12V
- RK10J
- RK104P
- RK102P
- RK09L
- RK09K
- RK097
- RK08H
- RK_RH
- RJZ-RGZ
- RJZ_RGZ
- RJX8FB5VGRB
- RJX8FB5VB
- RJX8FB5HUUEB
- RJX8FB5HUUB
- RJX8FB5HGYEB
- RJX8FB5HGYB
- RJX8FB5HGUEB
- RJX8FB5HGUB
- RJX8FB5HGGEB
- RJX8FB5HGGB
- RJX8FB5HB
- RJX8FB3VB
- RJX8FA5VB
- RJX8FA3VB
- RJW_16
- RJULE-42182-01
- RJULE4218201
- RJU400
- RJU275
- RJU150
- RJU140
- RJU095
- RJU070
- RJU050
- RJU040
- RJU003N03T106
- RJU003N03
- RJU002N06T106
- RJU002N06
- RJS-ST31
- RJSSE558001T
- RJSSE-5381-04
- RJSSE538104
- RJSSE-5381-02T
- RJSSE-5381-02
- RJSSE538102
- RJSSE-5381
- RJSSE5381
- RJSSE-5380-04
- RJSSE538004
- RJSSE-5380-02
- RJSSE538002
- RJSSE-5380
- RJSSE5380
- RJSSE-5081
- RJSSE5081
- RJSSE-5080-04
- RJSSE508004
- RJSSE508002
- RJSSE
- RJSR50E
- RJSNE
- RJSBE
- RJS7R5E
- RJS750
- RJS700
- RJS600
- RJS5-R
- RJS50KE
- RJS500
- RJS4-R
- RJS4K5E
- RJS400
- RJS3-R
- RJS350
- RJS300
- RJS2-R
- RJS250E
- RJS250
RJU數(shù)據(jù)表相關(guān)新聞
RJK0652DPB-00#J5
進(jìn)口代理
2023-8-25RK2918 ROCKCHIP
www.hfxcom.com
2021-12-9RK3188-T ROCKCHIP
www.hfxcom.com
2021-10-29RK3288
進(jìn)口原裝假一賠十
2020-10-28RJR26FT10CM,RJR26FW101P,RJR26FW
RJR26FT10CM,RJR26FW101P,RJR26FW
2020-5-16RJK03C9DNS-00-J5
RJK03C9DNS-00-J5深圳市拓億芯電子有限公司,專業(yè)代理,分銷(xiāo)世界名牌電子元器件,是一家專業(yè)化,品牌化的電子元器件,質(zhì)量第一,誠(chéng)信經(jīng)營(yíng)。
2019-3-7
DdatasheetPDF頁(yè)碼索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102