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Silicon N Channel MOS FET High Speed Power Switching

Features ? Built-in fast recovery diode ? Low on-resistance ? Low leakage current ? High speed switching

500V - 14A - MOS FET High Speed Power Switching

Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.42 ? typ. (at ID = 7 A, VGS = 10 V, Ta = 25 ?C) ? Low leakage current ? High speed switching ? Quality grade: Standard

500 V - 14 A - MOS FET High Speed Power Switching

Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) ? Low leakage current ? High speed switching

500 V - 14 A - MOS FET High Speed Power Switching

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THM TEST POINTS

(THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED ?Color keyed for visibility and quick identification ?Economical choice for PC test point terminations ?Snap-fit mounting provides positive retention for wave soldering ?Wire form loop for safe, non-sliptesting ?Space saving, ultra low

Works with low cost MSP430 based LaunchPad platform

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Works with MSP430 Launchpad

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Customer Specification

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Strip amplifier, it makes long LED strip implementation much more conveniently.

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