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RF212

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

ETCList of Unclassifed Manufacturers

未分類制造商

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

ETCList of Unclassifed Manufacturers

未分類制造商

Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

ETCList of Unclassifed Manufacturers

未分類制造商

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

HIGH POWER LINEAR AMPLIFIER

Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

Base Station Equipment

文件：312.34 Kbytes Page：4 Pages

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

M8 Male 3 Pin Field Attachable

文件：199.74 Kbytes Page：2 Pages

ALPHAWIREAlpha Wire

阿爾法電線

Direct replacement for T1 ? Lilliput Edison Screw E5

文件：266.18 Kbytes Page：5 Pages

MARL

Marl International Ltd

CTS 212 Rotary Switch

文件：346.96 Kbytes Page：2 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

M8 Male 3 Pin Field Attachable

文件：199.74 Kbytes Page：2 Pages

ALPHAWIREAlpha Wire

阿爾法電線

E-Z-Hook is dedicated to providing quality parts, delivered on-time at reasonable prices

文件：4.89948 Mbytes Page：122 Pages

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

RF212產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    RF212

  • 功能描述

    Image-Reject Front End for Dual or Tri-Band GSM Applications

更新時(shí)間：2025-8-15 23:11:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
RFMD
20+
SOP8
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
RFMD
24+
NA/
5640
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
RFMD
2016+
SOP8
2853
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
RFMD
23+
N/A
20000
全新原裝假一賠十
RFMD
24+
SOP-8
8000
只做原裝正品現(xiàn)貨
RFMD
24+
SOP-8
80000
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增
RFMD
22+23+
SOIC8
8000
新到現(xiàn)貨，只做原裝進(jìn)口
RFMD
25+
SOP-8
54658
百分百原裝現(xiàn)貨 實(shí)單必成
RFMD
22+
TSSOP20
100000
代理渠道/只做原裝/可含稅
24+
SOP
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div>

RF212芯片相關(guān)品牌

RF212規(guī)格書(shū)下載地址

RF212參數(shù)引腳圖相關(guān)

RF212數(shù)據(jù)表相關(guān)新聞

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