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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
PRM040N10CTB

100V Single N-Channel MOSFET

文件:850.38 Kbytes Page:8 Pages

PFC

節(jié)能元件

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半導(dǎo)體

MOSFET ??Power, Dual N-Channel 100 V, 39 m, 21 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? NVMFWD040N10MCL ? Wettable Flank Products ? These Devices are Pb?Free, Halogen Free/BFR Free, Berylliu

ONSEMI

安森美半導(dǎo)體

MOSFET ??Power, Single N-Channel 100 V, 38 m, 21 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? NVMFWS040N10MCL ? Wettable Flanks Product ? These Devices are Pb?Free, Halogen Free/BFR Free, Berylliu

ONSEMI

安森美半導(dǎo)體

更新時間:2025-8-12 19:10:00
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