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Transient Voltage Suppressor, Unidirectional

FEATURES: ? Equivalent Industry Standard Part Numbers – PHP8.4 to PHP500 & PIP8.4 to PIP500 ? 7,500 and 15,000 Watts Peak Pulse Power Dissipation ? Available in ranges from 8.4 to 500 Volts ? Each device is 100 tested ? Designed for Military (PHP Series) and Commercial (PIP Series)

AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICAL CHARACTERISTICS ? Hermetically Sealed Glass to Metal Sub-Assemblies (PHP) ? Sub-Assemblies are Packaged in Molded Epoxy Case (PIP) ? Weight 46 grams (Approximate) ? Flammability rating UL 94V-0 ? Device Marking: Logo & Part Number ? Screening Available Upon Request - The PHP &

ac power bus voltage suppressor

Description The PHP and PIP Series of devices are designed in accordance with DOD-STD-1399, section 300 interface standard and MIL-STD704A for shipboard systems, electrical power and alternating current. When large voltage transients endanger voltage sensitive components, this series provides r

TRANSIENT ABSORPTION ZENER

AC POWER BUS VOLTAGE SUPPRESSOR

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包裝：散裝 描述：TVS DIODE 電路保護(hù) TVS - 二極管

AC POWER BUS VOLTAGE SUPPRESSOR

文件：72.81 Kbytes Page：4 Pages

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’technology ? Low on-state resistance ? Fast switching

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’technology ? Low on-state resistance ? Fast switching

N-channel TrenchMOS standard level FET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Po

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS standard level FET

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the S

N-Channel 150 V (D-S) MOSFET

FEATURES ? TrenchFET? power MOSFET ? Package with low thermal resistance ? 100 Rg and UIS tested

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 29A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS standard level FET

PowerMOS transistor Logic level FET

封裝/外殼：模塊 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：BI-DIRECTIONAL TVS 電路保護(hù) TVS - 二極管

N-channel TrenchMOS standard level FET