国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

N??hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 37mΩ ID 20A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 37A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 32mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is sup

N-Channel 60 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended