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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 44A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

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N-channel TrenchMOS logic level FET

文件：91.74 Kbytes Page：13 Pages

Philips

飛利浦

N-channel TrenchMOS logic level FET

ETC

知名廠家

N-Channel Enhancement Mode Power MOSFET

Description The G36N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The G36N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半導(dǎo)體

PHD36N03產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    PHD36N03

  • 制造商

    PHILIPS

  • 制造商全稱

    NXP Semiconductors

  • 功能描述

    N-channel TrenchMOS logic level FET

更新時(shí)間：2025-8-9 8:08:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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恩XP
24+
TO252
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恩XP
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PHI
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