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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
PHD1N60E

N-Channel 650 V (D-S) MOSFET

文件：1.08597 Mbytes Page：9 Pages

VBSEMI

微碧半導(dǎo)體

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features ? Germanium Glass Diode ? RoHS Compliance

ETCList of Unclassifed Manufacturers

未分類制造商

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES ? Hermetically sealed ? Breakdown voltage range 6.8 - 200 volts ? Glass passivated junction ? Excellent clamping capability ? Low zener impedance ? 100 surge tested ? -55°C to +150°C ? Bi-directional MAXIMUM RATING ? Peak Pulse Power (Ppk): 15000 Watts (10 x 1000μs)@25°C (see di

Littelfuse

力特

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

FORMOSA

美麗微半導(dǎo)體

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

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etc未分類制造商未分類制造商

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

UTC

友順

更新時間：2025-8-13 9:31:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
N
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
N
25+
TO-252
37650
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
24+
N/A
65000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
PHI
23+
TO-252
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
PHI
22+
SOT252
100000
代理渠道/只做原裝/可含稅
恩XP
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
N
22+
TO-252
6000
十年配單,只做原裝
N
23+
TO-252
6000
原裝正品，支持實(shí)單

PHD1N60E芯片相關(guān)品牌

PHD1N60E規(guī)格書下載地址

PHD1N60E參數(shù)引腳圖相關(guān)

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