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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
PDM41028SA15TSO

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1 Megabit Static RAM 256K x 4-Bit

[Paradigm-Technology] Description The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

PDM41028SA15TSO產(chǎn)品屬性

  • 類型

    描述

  • 型號

    PDM41028SA15TSO

  • 功能描述

    1 Megabit Static RAM 256K x 4-Bit

更新時間:2025-8-14 23:01:00
IC供應商 芯片型號 品牌 批號 封裝 庫存 備注 價格
PARADIG
24+
NA/
60
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PARADIG
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CDIP36
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PARADIGM
9625+
SOJ
20
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PAR
24+/25+
11
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96
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6
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PARADIG
1548+
SOJ28
14830
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PARADIGM
23+
NA
260
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3000
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PARADIGM
QQ咨詢
N/A
145
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PARADIGM
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CDIP28
96800
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