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PD57060S

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent

STMICROELECTRONICS

意法半導(dǎo)體

PD57060S

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent

STMICROELECTRONICS

意法半導(dǎo)體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

STMICROELECTRONICS

意法半導(dǎo)體

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

STMICROELECTRONICS

意法半導(dǎo)體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

STMICROELECTRONICS

意法半導(dǎo)體

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

STMICROELECTRONICS

意法半導(dǎo)體

封裝/外殼：PowerSO-10 裸露底部焊盤 包裝：托盤 描述：FET RF 65V 945MHZ PWRSO10 分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻

STMICROELECTRONICS

意法半導(dǎo)體

封裝/外殼：PowerSO-10 裸露底部焊盤 包裝：帶 描述：FET RF 65V 945MHZ PWRSO-10 分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻

STMICROELECTRONICS

意法半導(dǎo)體

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

STMICROELECTRONICS

意法半導(dǎo)體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

STMICROELECTRONICS

意法半導(dǎo)體

Magnets and Actuators

Description Littelfuse offers a wide range of magnetic actuators that are packaged in shapes similar to the relative mating sensors. We also offer a limited family of bare magnets with various grades of materials, including ferrite (ceramic), AlNiCo and neodymium iron boron (NdFeB) materials.

Littelfuse

力特

200V, N-CHANNEL

文件：107.48 Kbytes Page：8 Pages

IRF

PD57060S產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    PD57060S

  • 功能描述

    射頻MOSFET電源晶體管 N-Ch 65 Volt 7 Amp

  • RoHS

    否

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 頻率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 輸出功率

    100 W

  • 封裝/箱體

    NI-780-4

  • 封裝

    Tray

更新時(shí)間：2025-8-24 17:10:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法半導(dǎo)體
21+
10RF-Straight-4
8860
原裝現(xiàn)貨,實(shí)單價(jià)優(yōu)
ST/意法半導(dǎo)體
21+
10RF-Straight-4
8860
只做原裝,質(zhì)量保證
ST/意法
23+
PWRSO10
5000
原裝正品實(shí)單必成
ST
2025+
PowerSO-10RF
16000
原裝優(yōu)勢(shì)絕對(duì)有貨
ST
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
ST/意法半導(dǎo)體
23+
10RF-Straight-4
12820
正規(guī)渠道,只有原裝!
ST
24+
PowerSO-10
652
ST/意法半導(dǎo)體
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！
ST/意法半導(dǎo)體
24+
10RF-Straight-4
16900
原裝現(xiàn)貨 實(shí)單價(jià)優(yōu)
ST/意法半導(dǎo)體
24+
10RF-Straight-4
16960
原裝正品現(xiàn)貨支持實(shí)單

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