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15 V low VCEsat PNP double transistor

DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. FEATURES ? 300 mW total power dissipation ? Very small 1.6 x 1.2 mm ultra thin package ? Self alignment during soldering due to straight leads ? Low collector-emitter saturation voltage ?

15 V low VCE(sat) PNP double transistor

15 V low VCEsat PNP double transistor

1. General description PNP low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515VS 2. Features and benefits ? 300 mW total power dissipation ? Very small 1.6 x 1.2 mm ultra thin package ? Self alignment du

Customer Specification

Construction Diameters (In) 1) Component 1 15 X 1 COND a) Conductor 22 (7/30) AWG TC 0.030 b) Insulation 0.016 Wall, Nom. PVC 0.062 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 6 BLUE 11 BROWN 2 RED 7 VILOET 12 RED 3 ORANGE 8 SLATE 13 ORANGE 4 YELLOW 9 WHITE 14 YELLOW 5 GREEN 1

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS FOR HIGH-TEMPERATURE OPERATION The A3515– and A3516– are sensitive, temperature-stable linear Hall effect sensors with greatly improved offset characteristics. Ratiometric, linear Hall-effect sensors provide a voltage output that is proportional to the

RAST-2.5-Steckverbinder, Raster 2,5/5,0 mm

RAST 2.5 connector for direct mating, insulation displacement technology (IDT), with locking on printed circuit board by means of locking hooks, alternatively with or without keying rib and closed sides

RAST 2.5 connectors, pitch 2.5/5.0 mm

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Customer Specification

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