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N-CHANNEL700V-1.1ohm-6ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

N-CHANNEL700V-1.1ohm-6ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

N-CHANNEL700V-1.1ohm-6ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

N-CHANNEL700V-1.1ohm-6ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

N-CHANNEL700V-1.1ohm-6ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH??IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY?PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS
更新時(shí)間：2025-7-22 11:10:01
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法
23+
TO-220
68220
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
NEXPERIA/安世
23+
SOT883
69820
終端可以免費(fèi)供樣,支持BOM配單!
ST
23+
3
16900
正規(guī)渠道,只有原裝!
ST
1926+
TO-220
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
ST
24+
12
原裝現(xiàn)貨,可開13%稅票
ST
2023+
TO-220
50000
原裝現(xiàn)貨
ST
24+
TO-220
16900
支持樣品,原裝現(xiàn)貨,提供技術(shù)支持!
ST
24+
TO-220
4897
絕對(duì)原裝!現(xiàn)貨熱賣!
ST/進(jìn)口原
24+
TO-220
5000
全現(xiàn)原裝公司現(xiàn)貨
24+
100

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    製造商:Littelfuse 產(chǎn)品類型:ESD抑制器/TVS二晶體 RoHS:詳細(xì)資料 產(chǎn)品類型:TVSDiodes 極性:Bidirectional 操作電壓:12.8V 終端類型:SMD/SMT 封裝/外殼:DO-214AA-2 擊穿電壓:15.8V 鉗位電壓:21.2V Pppm-峰值脈衝功率消耗:600W Vesd-電壓靜電放電觸點(diǎn):- Vesd-電壓靜電放電空

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