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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
NVTFS020N06CTAG

MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVTFWS020N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Fr

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=313A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

無錫固電

isc N-Channel MOSFET Transistor

? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤2.0m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operati

ISC

無錫固電

OptiMOSTM Power-Transistor

Features ? Optimized for high performance SMPS, e.g. sync. rec. ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

Infineon

英飛凌

New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes Page：12 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

Infineon

英飛凌

更新時間：2025-9-18 23:01:00
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24+
NA/
8735
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ON
23+
WDFN-8
50
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兩年內(nèi)
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6230
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9000
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WDFN-8(3x3)
8850
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9000
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