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MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWS016N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWS016N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

OptiMOSTM Power-MOSFET, 60 V

Features ? Double side cooled package-with lowest Juntion-top thermal resistance ? 175°C rated ? Optimized for synchronous rectification ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 ? High

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

OptiMOSTM Power-MOSFET

文件：610.8 Kbytes Page：10 Pages

OptiMOSTM Power-MOSFET, 60 V

文件：1.41665 Mbytes Page：13 Pages

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A

文件：225.64 Kbytes Page：8 Pages