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Single N-Channel Field Effect Transistor

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? These Devices are Pb?Free and are RoHS Compliant

單 N 溝道功率 MOSFET 60V，68A，6.7mΩ

Single N-Channel Field Effect Transistor

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? These Devices are Pb?Free and are RoHS Compliant

Single N-Channel Field Effect Transistor

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? These Devices are Pb?Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 60 V, 7.0 m, 71 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFS5C670NWF ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and

Power MOSFET

文件：86.82 Kbytes Page：6 Pages

Power MOSFET

文件：86.82 Kbytes Page：6 Pages

Power MOSFET

文件：86.82 Kbytes Page：6 Pages