国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

TMOS E-FET Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Capability Specified at Elevated Temperature

? Low Stored Gate Charge for Efficient Switching

? Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode

? Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

* See App. Note AN1327 — Very Wide Input Voltage Range;

Off–line Flyback Switching Power Supply