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位置:MTP3N100E > MTP3N100E詳情

MTP3N100E中文資料

廠家型號

MTP3N100E

文件大小

206.35Kbytes

頁面數(shù)量

8

功能描述

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

生產(chǎn)廠商

MOTOROLA

MTP3N100E數(shù)據(jù)手冊規(guī)格書PDF詳情

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Robust High Voltage Termination

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

更新時間:2025-9-15 11:08:00
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MOTOROLA/摩托羅拉
20+
TO-220
67500
原裝優(yōu)勢主營型號-可開原型號增稅票
MOTOROLA
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
MOT
06+
TO-220
2000
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ON
24+
N/A
5000
公司存貨
ON
23+
TO-220
6893
ON
25+
TO-220
4650
ON/安森美
23+
TO-220
50000
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ON/安森美
2022+
TO220
12888
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ON/安森美
23+
TO-220
6000
原裝正品,支持實單
ON/安森美
24+
NA/
13888
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