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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -25A@ TC=25℃ ·Drain Source Voltage -VDSS= -50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power Field Effect Transistor

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512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 128 bytes at a time, using the Page Program instruction. The memory is organized as 2 sectors, ea

512 Kbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P05 is designed to allow e

512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 128 bytes at a time, using the Page Program instruction. The memory is organized as 2 sectors, ea

512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. FEATURES SUMMARY ■ 512Kbit to 32Mbit of Flash Memory ■ Page Program (up to 256 Bytes) in 1.4ms(typical) ■ Sector Erase (2

SCHOTTKY BARRIER DIODE

文件：65.89 Kbytes Page：2 Pages