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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
MTB6N60

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET? High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

Motorola

摩托羅拉

MTB6N60

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET? High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

Motorola

摩托羅拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET? High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

Motorola

摩托羅拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET? High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

Motorola

摩托羅拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

ETC

知名廠家

TMOS POWER FET 6.0 AMPERES 600 VOLTS

ETC

知名廠家

High Energy PowerFET

ONSEMI

安森美半導(dǎo)體

High Energy PowerFET

文件：214.29 Kbytes Page：7 Pages

ONSEMI

安森美半導(dǎo)體

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

? DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友順

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

ISC

無錫固電

N-Channel 600V (D-S) Power MOSFET

文件：1.0803 Mbytes Page：9 Pages

VBSEMI

微碧半導(dǎo)體

N-CHANNEL POWER MOSFET

文件：460.3 Kbytes Page：6 Pages

ZSELEC

淄博圣諾

N-Channel Power MOSFET

文件：486.21 Kbytes Page：10 Pages

NELLSEMI

尼爾半導(dǎo)體

MTB6N60產(chǎn)品屬性

  • 類型

    描述

  • 型號

    MTB6N60

  • 制造商

    MOTOROLA

  • 制造商全稱

    Motorola, Inc

  • 功能描述

    TMOS POWER FET 6.0 AMPERES 600 VOLTS

更新時間：2025-9-12 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ON/安森美
24+
NA/
5145
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
MOTOROLA/摩托羅拉
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
ON
24+
TO-263
504539
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
MOTOROLA
24+
TO-263
16800
絕對原裝進口現(xiàn)貨 假一賠十 價格優(yōu)勢!?
ON
23+
TO-263
6893
ON
25+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
MOT
25+23+
TO263
72872
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
MOTOROLA
22+
TO-263
3000
原裝正品,支持實單
ON
25+
TO-263
35400
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
MOTOROLA/摩托羅拉
24+
2000
只做原廠渠道 可追溯貨源

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