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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
MT5C1008CW-35

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES ? High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns ? Battery Backup: 2V data retentio

AUSTIN

MT5C1008CW-35產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    MT5C1008CW-35

  • 制造商

    Micross Components, Inc.

  • 功能描述

    SRAM, 1MB - Rail/Tube

更新時(shí)間：2025-9-11 22:50:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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20000
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04+
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3
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2021+
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1630
十年專營(yíng)原裝現(xiàn)貨,假一賠十
MICRON
15+
NA
1630
全新進(jìn)口原裝
MICRON
85+
1
公司優(yōu)勢(shì)庫(kù)存 熱賣中!
asi
23+
cdip
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
MICRON
25+
SOJ-32
4650
EDI
QQ咨詢
CDIP
228
全新原裝 研究所指定供貨商
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22+
AUDIP
12245
現(xiàn)貨,原廠原裝假一罰十!
ASI
25+
DIP
18000
原廠直接發(fā)貨進(jìn)口原裝

MT5C1008CW-35芯片相關(guān)品牌

MT5C1008CW-35規(guī)格書下載地址

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