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MT48LC16M8A2TG價(jià)格

參考價(jià)格：￥48.0744

型號(hào)：MT48LC16M8A2TG-75IT:G 品牌：MICRON 備注：這里有MT48LC16M8A2TG多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MT48LC16M8A2TG批發(fā)/采購(gòu)報(bào)價(jià)，MT48LC16M8A2TG行情走勢(shì)銷售排行榜，MT48LC16M8A2TG報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
MT48LC16M8A2TG

SYNCHRONOUS DRAM

Micron

美光

MT48LC16M8A2TG

SYNCHRONOUS DRAM

文件：4.137859 Mbytes Page：55 Pages

Micron

美光

MT48LC16M8A2TG

SYNCHRONOUS DRAM

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

SYNCHRONOUS DRAM

General Description The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-

Micron

美光

封裝/外殼：54-TSOP（0.400"，10.16mm 寬） 包裝：托盤 描述：IC DRAM 128MBIT PAR 54TSOP II 集成電路（IC） 存儲(chǔ)器

ETC

知名廠家

封裝/外殼：54-TSOP（0.400"，10.16mm 寬） 包裝：卷帶（TR）剪切帶（CT） 描述：IC DRAM 128MBIT PAR 54TSOP II 集成電路（IC） 存儲(chǔ)器

ETC

知名廠家

MT48LC16M8A2TG產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    MT48LC16M8A2TG

  • 制造商

    MICRON

  • 制造商全稱

    Micron Technology

  • 功能描述

    SYNCHRONOUS DRAM

更新時(shí)間：2025-9-15 20:08:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
MT
TSOP54
2667
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
MRON/美光
24+
NA/
440
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
現(xiàn)貨MICRON
25+
原廠原封可拆樣
65248
百分百原裝現(xiàn)貨 實(shí)單必成
MICRON
06+
TSOP
520
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
MT
24+
TSOP
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！
MICRON
20+
SSOP
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
MICRON
25+
SOP
18000
原廠直接發(fā)貨進(jìn)口原裝
MICRON10
23+
NA
898
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià)，原裝元器件供應(yīng)，支持開(kāi)發(fā)樣品
MCT
24+/25+
760
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
MICRON
2025+
TSOP
3795
全新原裝、公司現(xiàn)貨熱賣

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MT48LC16M8A2TG規(guī)格書(shū)下載地址

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