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封裝/外殼：84-TFBGA 包裝：托盤 描述：IC DRAM 1GBIT PARALLEL 84FBGA 集成電路（IC） 存儲器

DDR2 1G X16 FBGA

封裝/外殼：84-TFBGA 包裝：托盤 描述：IC DRAM 1GBIT PARALLEL 84FBGA 集成電路（IC） 存儲器

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

DDR2 SDRAM MT47H256M4 ??32 Meg x 4 x 8 banks MT47H128M8 ??16 Meg x 8 x 8 banks MT47H64M16 ??8 Meg x 16 x 8 banks

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup

DDR2 SDRAM

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features ? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V ? JEDEC-standard 1.8V I/O (SSTL_18-compatible) ? Differential data strobe (DQS, DQS#) option ? 4n-bit prefetch architecture ? Dup