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MJE802晶體管資料

  • MJE802別名：MJE802三極管、MJE802晶體管、MJE802晶體三極管

  • MJE802生產(chǎn)廠家：美國(guó)摩托羅拉半導(dǎo)體公司

  • MJE802制作材料：Si-N+Darl+Di

  • MJE802性質(zhì)：低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L

  • MJE802封裝形式：直插封裝

  • MJE802極限工作電壓：80V

  • MJE802最大電流允許值：4A

  • MJE802最大工作頻率：<1MHZ或未知

  • MJE802引腳數(shù)：3

  • MJE802最大耗散功率：40W

  • MJE802放大倍數(shù)：β>750

  • MJE802圖片代號(hào)：B-21

  • MJE802vtest：80

  • MJE802htest：999900

  • MJE802atest：4

  • MJE802wtest：40

  • MJE802代換 MJE802用什么型號(hào)代替：BD263A,BD679,BD779,FD50B,2N6039,

MJE802價(jià)格

參考價(jià)格：￥2.6116

型號(hào)：MJE802 品牌：STMicroelectronics 備注：這里有MJE802多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MJE802批發(fā)/采購(gòu)報(bào)價(jià)，MJE802行情走勢(shì)銷售排行榜，MJE802報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
MJE802

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. ? High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication ? Choice of Packages — MJE700 and MJE800 series

Motorola

摩托羅拉

MJE802

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built?in Base?Emitter Resistors to Limit Leakage ? Multiplication ? Choice of Packages ? M

ONSEMI

安森美半導(dǎo)體

MJE802

SILICON NPN POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES

STMICROELECTRONICS

意法半導(dǎo)體

MJE802

Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base Emitter Resistors ??????? ? High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC ? Complement to MJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE802

SILICON NPN POWER DARLINGTON TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power

STMICROELECTRONICS

意法半導(dǎo)體

MJE802

Silicon NPN Power Transistors

DESCRIPTION ? With TO-126 package ? Complement to type MJE700/701/702/703 ? High DC current gain ? DARLINGTON APPLICATIONS ? Designed for general–purpose amplifier and low–speed switching applications

SAVANTIC

MJE802

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ? With TO-126 package ? Complement to type MJE700/701/702/703 ? High DC current gain ? DARLINGTON APPLICATIONS ? Designed for general–purpose amplifier and low–speed switching applications

ISC

無(wú)錫固電

MJE802

Silicon NPN Power Transistors

DESCRIPTION ? With TO-126 package ? Complement to type MJE700/701/702/703 ? High DC current gain ? DARLINGTON APPLICATIONS ? Designed for general–purpose amplifier and low–speed switching applications

ISC

無(wú)錫固電

MJE802

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

Central

MJE802

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. ? High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication ? Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE802

封裝/外殼：TO-225AA，TO-126-3 包裝：散裝 描述：TRANS NPN DARL 80V 4A SOT32 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

STMICROELECTRONICS

意法半導(dǎo)體

MJE802

Silicon NPN Power Transistors

文件：104.62 Kbytes Page：3 Pages

SAVANTIC

MJE802

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半導(dǎo)體

SILICON NPN POWER DARLINGTON TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power

STMICROELECTRONICS

意法半導(dǎo)體

Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built?in Base?Emitter Resistors to Limit Leakage ? Multiplication ? Choice of Packages ? M

ONSEMI

安森美半導(dǎo)體

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

統(tǒng)懋

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ? Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ? DC Current Gain— : hFE = 750(Min) @ IC= 2A ? Complement to Type MJE702T APPLICATIONS ? Designed for general-purpose amplifier and low-speed switching applications

ISC

無(wú)錫固電

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半導(dǎo)體

NPN Epitaxial Silicon Darlington Transistor

文件：214.21 Kbytes Page：1 Pages

TGS

封裝/外殼：TO-225AA，TO-126-3 包裝：管件 描述：TRANS NPN DARL 80V 4A TO126-3 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

ONSEMI

安森美半導(dǎo)體

3/4 STRINGS Xmas LIGHT CONTROL

FEATURES * Adjustable flash rate. * Programmable 2/3/4 strings of bulbs. * UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. * UTC 802 sequential mode only. APPLICATION * Xmas light controller, any

UTC

友順

RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 20-35 AMP, STANDARD HIGH EFFICIENCY, ESP SERIES

? Current ratings to 35A ? VRRM to 150V ? Only fused-in-glass diodes used ? 150 °C junction temperature ? Surge ratings to 25A ? Recovery time: 50nS ? Electrically isolated Aluminum case ? MIL-PRF-19500 Similarity ? Sn/Pb terminations

Microsemi

美高森美

M8 Plastic Passive I/O Box

文件：165.5 Kbytes Page：2 Pages

ALPHAWIREAlpha Wire

阿爾法電線

INTERCONNECTS .100??Grid (.030??dia.) Pins, Straight and Right Angle Double Row

文件：300.59 Kbytes Page：1 Pages

MILL-MAX

Mill-Max Manufacturing Corp.

Panel Mount for 5x20 mm und 6.3x32 mm Fuses

文件：178.31 Kbytes Page：1 Pages

Littelfuse

力特

MJE802產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    MJE802

  • 功能描述

    達(dá)林頓晶體管 NPN Power Darlington

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶體管極性

    NPN 集電極—發(fā)射極最大電壓

  • VCEO

    50 V 發(fā)射極 - 基極電壓

  • VEBO

    集電極—基極電壓

  • 最大直流電集電極電流

    0.5 A

  • 最大工作溫度

    + 150 C

  • 安裝風(fēng)格

    SMD/SMT

  • 封裝/箱體

    SOIC-18

  • 封裝

    Reel

更新時(shí)間：2025-9-4 14:50:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
21+
TO-126
1638
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!
ON
24+
TO-126
95000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
ST/意法
25+
TO-225AATO-126
54558
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià)
96+
TO-126
38
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST/
24+
TO-126
25836
只做原裝 直接聯(lián)系
ST/ON
1738+
TO-126
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
FAIRCHILD
25+
TO-126
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
ST
24+
TO-126
25000
ST專營(yíng)品牌全新原裝熱賣
ST/
24+
TO-126
5000
全新原裝正品,現(xiàn)貨銷售
ON(安森美)
23+
TO-225
11753
公司只做原裝正品,假一賠十

MJE802芯片相關(guān)品牌

MJE802規(guī)格書下載地址

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MJE802數(shù)據(jù)表相關(guān)新聞

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