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MJE800晶體管資料
MJE800別名：MJE800三極管、MJE800晶體管、MJE800晶體三極管
MJE800生產(chǎn)廠家：美國(guó)摩托羅拉半導(dǎo)體公司
MJE800制作材料：Si-N+Darl+Di
MJE800性質(zhì)：低頻或音頻放大 （LF）_開(kāi)關(guān)管 （S）_功率放大 （L
MJE800封裝形式：直插封裝
MJE800極限工作電壓：60V
MJE800最大電流允許值：4A
MJE800最大工作頻率：<1MHZ或未知
MJE800引腳數(shù)：3
MJE800最大耗散功率：40W
MJE800放大倍數(shù)：β>750
MJE800圖片代號(hào)：B-21
MJE800vtest：60
MJE800htest：999900
- MJE800atest：4
MJE800wtest：40
MJE800代換 MJE800用什么型號(hào)代替：BD263,BD677,BD777,FD50B,2N3038,2N6039,
MJE800價(jià)格
參考價(jià)格：￥1.2952
型號(hào)：MJE800G 品牌：ON 備注：這里有MJE800多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MJE800批發(fā)/采購(gòu)報(bào)價(jià)，MJE800行情走勢(shì)銷售排行榜，MJE800報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MJE800 | Monolithic Construction With Built-in Base- Emitter Resistors Monolithic Construction With Built-in Base Emitter Resistors ??????? ? High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC ? Complement to MJE700/701/702/703 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |   | |
MJE800 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY These devices are designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built?in Base?Emitter Resistors to Limit Leakage ? Multiplication ? Choice of Packages ? M | ONSEMI 安森美半導(dǎo)體 | | |
MJE800 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. | Central | | |
MJE800 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. ? High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication ? Choice of Packages — MJE700 and MJE800 series | Motorola 摩托羅拉 | | |
MJE800 | Silicon NPN Power Transistors DESCRIPTION ? With TO-126 package ? Complement to type MJE700/701/702/703 ? High DC current gain ? DARLINGTON APPLICATIONS ? Designed for general–purpose amplifier and low–speed switching applications | ISC 無(wú)錫固電 | | |
MJE800 | Plastic Darlington Complementary Silicon Power Transistors ... designed for general-purpose amplifier and low-speed switching applications. ? High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication ? Choice of Packages — MJE700 and MJE800 series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | | |
MJE800 | Silicon NPN Power Transistors DESCRIPTION ? With TO-126 package ? Complement to type MJE700/701/702/703 ? High DC current gain ? DARLINGTON APPLICATIONS ? Designed for general–purpose amplifier and low–speed switching applications | SAVANTIC | | |
MJE800 | Silicon NPN Power Transistors 文件：104.62 Kbytes Page：3 Pages | SAVANTIC | | |
MJE800 | Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | Central | | |
MJE800 | Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-126 | NJS | | |
MJE800 | 4.0 A, 60 V NPN Darlington Bipolar Power Transistor | ONSEMI 安森美半導(dǎo)體 | | |
MJE800 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 文件：84.77 Kbytes Page：6 Pages | ONSEMI 安森美半導(dǎo)體 | | |
Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built?in Base?Emitter Resistors to Limit Leakage ? Multiplication ? Choice of Packages ? M | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 統(tǒng)懋 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. ? High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication ? Choice of Packages — MJE700 and MJE800 series | Motorola 摩托羅拉 | | ||
DARLINGTON POWER TRANSISTORS COMPLEMENTARY These devices are designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built?in Base?Emitter Resistors to Limit Leakage ? Multiplication ? Choice of Packages ? M | ONSEMI 安森美半導(dǎo)體 | | ||
Plastic Darlington Complementary Silicon Power Transistors ... designed for general-purpose amplifier and low-speed switching applications. ? High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc ? Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication ? Choice of Packages — MJE700 and MJE800 series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | | ||
封裝/外殼：TO-225AA，TO-126-3 包裝：管件 描述：TRANS NPN DARL 60V 4A TO126 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | ONSEMI 安森美半導(dǎo)體 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 文件：84.77 Kbytes Page：6 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
封裝/外殼：TO-225AA，TO-126-3 包裝：管件 描述：TRANS NPN DARL 60V 4A TO126-3 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | ONSEMI 安森美半導(dǎo)體 | | ||
isc Silicon NPN Darlington Power Transistor 文件：250.84 Kbytes Page：2 Pages | ISC 無(wú)錫固電 | | ||
Single, Dual, Triple Output DC/DC Converter DESCRIPTIONS The 800 series is family of miniature, high performance and high reliability DC/DC converters. The 800 series operates over 2:1 input voltage ranges of 9 to 18, 18 to 36 or 36 to 72VDC; providing single, dual and triple output combinations of 5, 12, 15, ±5, ±12, ±15, 5/±12 and 5/±15 | MAKE-PS | | ||
RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 20-40 AMP, STANDARD HIGH EFFICIENCY, ESP ? Current ratings to 40 A ? VRRM to 150 V ? Only fused-in-glass diodes used ? 150 °C junction temperature ? Recovery time : 25 nS ? Surge ratings to 250 A ? Electrically isolated Aluminum case ? MIL-PRF-19500 Similarity ? SN/Pb terminations | Microsemi 美高森美 | | ||
Panel Mount, Shocksafe 6.3x32mm Fuses 文件：78.01 Kbytes Page：1 Pages | Littelfuse 力特 | | ||
Panel Mount, Shocksafe 6.3x32mm Fuses 文件：78.43 Kbytes Page：1 Pages | Littelfuse 力特 | | ||
INTERCONNECTS .100??Grid (.030??dia.) Low Profile Headers & Versatile Sockets Single and Double Row 文件：184.76 Kbytes Page：1 Pages | MILL-MAX Mill-Max Manufacturing Corp. | |
MJE800產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MJE800
- 功能描述
達(dá)林頓晶體管 4A 60V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶體管極性
NPN 集電極—發(fā)射極最大電壓
- VCEO
50 V 發(fā)射極 - 基極電壓
- VEBO
集電極—基極電壓
- 最大直流電集電極電流
0.5 A
- 最大工作溫度
+ 150 C
- 安裝風(fēng)格
SMD/SMT
- 封裝/箱體
SOIC-18
- 封裝
Reel
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
TO-126 |
4000 |
原裝原廠代理 可免費(fèi)送樣品 |
|||
ON |
24+ |
N/A |
5400 |
||||
ON |
24+ |
TO-225 |
9000 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
|||
ON/安森美 |
24+ |
TSSOP |
10000 |
原裝進(jìn)口只做訂貨 尋找優(yōu)勢(shì)渠道合作 |
|||
ON(安森美) |
2511 |
TO-126 |
5904 |
電子元器件采購(gòu)降本 30%!盈慧通原廠直采,砍掉中間差價(jià) |
|||
FSC |
23+ |
TO-126 |
5500 |
現(xiàn)貨,全新原裝 |
|||
ON |
2025+ |
TO-225-3 |
32560 |
原裝優(yōu)勢(shì)絕對(duì)有貨 |
|||
on |
20+ |
4500 |
原裝現(xiàn)貨 也有國(guó)產(chǎn)替代 |
||||
24+ |
N/A |
60000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
||||
ON/安森美 |
22+ |
TO-126 |
6000 |
十年配單,只做原裝 |
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MJE800規(guī)格書(shū)下載地址
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MJE800數(shù)據(jù)表相關(guān)新聞
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DdatasheetPDF頁(yè)碼索引
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