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MJE271晶體管資料

  • MJE271別名：MJE271三極管、MJE271晶體管、MJE271晶體三極管

  • MJE271生產(chǎn)廠家：

  • MJE271制作材料：Si-P+Darl

  • MJE271性質(zhì)：

  • MJE271封裝形式：直插封裝

  • MJE271極限工作電壓：100V

  • MJE271最大電流允許值：2A

  • MJE271最大工作頻率：>6MHZ

  • MJE271引腳數(shù)：3

  • MJE271最大耗散功率：15W

  • MJE271放大倍數(shù)：β>1500

  • MJE271圖片代號(hào)：B-21

  • MJE271vtest：100

  • MJE271htest：6000100

  • MJE271atest：2

  • MJE271wtest：15

  • MJE271代換 MJE271用什么型號(hào)代替：BDT60B...C,BDW54C...D,2SD751B,

MJE271價(jià)格

參考價(jià)格：￥1.2443

型號(hào)：MJE271G 品牌：ON 備注：這里有MJE271多少錢，2025年最近7天走勢，今日出價(jià)，今日競價(jià)，MJE271批發(fā)/采購報(bào)價(jià)，MJE271行情走勢銷售排行榜，MJE271報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
MJE271

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features ? High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A ? Collector?Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) ? High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) ? Pb?Free Packages are Available*

ONSEMI

安森美半導(dǎo)體

MJE271

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). ? High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 ? Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) ? High DC

Motorola

摩托羅拉

MJE271

NPN PLASTIC POWER TRANSISTOR

MJE270 NPN PLASTIC POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

TEL

東電電子

MJE271

封裝/外殼：TO-225AA，TO-126-3 包裝：托盤 描述：TRANS PNP DARL 100V 2A TO126 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

ONSEMI

安森美半導(dǎo)體

MJE271

2.0 A，100 V，PNP 達(dá)林頓雙極功率晶體管

ONSEMI

安森美半導(dǎo)體

MJE271

PLASTIC POWER TRANSISTOR

文件：526.1 Kbytes Page：3 Pages

CDIL

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features ? High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A ? Collector?Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) ? High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) ? Pb?Free Packages are Available*

ONSEMI

安森美半導(dǎo)體

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors Features ? High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A ? Collector?Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) ? High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) ? These Devices are Pb?Free and are RoHS Compliant*

ONSEMI

安森美半導(dǎo)體

Complementary Silicon Power Transistors

Features ? High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A ? Collector?Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) ? High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) ? These Devices are Pb?Free and are RoHS Compliant

ONSEMI

安森美半導(dǎo)體

封裝/外殼：TO-225AA，TO-126-3 包裝：托盤 描述：TRANS PNP DARL 100V 2A TO126 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

ONSEMI

安森美半導(dǎo)體

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

AITSEMI

創(chuàng)瑞科技

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

AITSEMI

創(chuàng)瑞科技

Rectangular Case, High-Current and High-Voltage Circuits

Types 271, 272, 273 are designed for frequencies ranging from 100 kHz to 3 MHz and are well suited for high-current and high-voltage radio transmitter circuit applications. Cast in rectangular cases, these capacitors are electrically equivalent to MIL-C-5 Styles CM65 through CM73 in capacitance

CDE

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件：124.92 Kbytes Page：1 Pages

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MJE271產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    MJE271

  • 功能描述

    兩極晶體管 - BJT 2A 100V Bipolar

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    PNP 集電極—基極電壓

  • VCBO

    集電極—發(fā)射極最大電壓

  • VCEO

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO

    - 6 V

  • 增益帶寬產(chǎn)品fT

    直流集電極/Base Gain hfe

  • Min

    100 A

  • 安裝風(fēng)格

    SMD/SMT

  • 封裝/箱體

    PowerFLAT 2 x 2

更新時(shí)間：2025-9-15 20:00:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
22+
TO126
100000
代理渠道/只做原裝/可含稅
ON/安森美
24+
NA/
3280
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
MOTOROLA/摩托羅拉
24+
NA
990000
明嘉萊只做原裝正品現(xiàn)貨
ON
24+/25+
24980
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
MOTOROLA/摩托羅拉
2450+
TO-126
9850
只做原裝正品現(xiàn)貨或訂貨假一賠十!
ON/安森美
21+
NA
7478
只做原裝,假一罰十
ON/安森美
NA
275000
一級(jí)代理原裝正品,價(jià)格優(yōu)勢,長期供應(yīng)!
ON
25+23+
TO-225
17591
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
ON/安森美
21+
NA
12820
只做原裝,質(zhì)量保證
MOTOROLA/摩托羅拉
2023+
TO-126
4900
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MJE271芯片相關(guān)品牌

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