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MJD32晶體管資料
MJD32別名：MJD32三極管、MJD32晶體管、MJD32晶體三極管
MJD32生產(chǎn)廠家：韓國三星公司
MJD32制作材料：
MJD32性質(zhì)：低頻或音頻放大 （LF）_功率放大 （PA）
MJD32封裝形式：貼片封裝
MJD32極限工作電壓：
MJD32最大電流允許值：3A
MJD32最大工作頻率：<1MHZ或未知
MJD32引腳數(shù)：3
MJD32最大耗散功率：15W
MJD32放大倍數(shù)：
MJD32圖片代號：G-217
MJD32vtest：0
MJD32htest：999900
- MJD32atest：3
MJD32wtest：15
MJD32代換 MJD32用什么型號代替：
MJD32價格
參考價格：￥0.5725
型號：MJD32C-13 品牌：Diodes 備注：這里有MJD32多少錢，2025年最近7天走勢，今日出價，今日競價，MJD32批發(fā)/采購報價，MJD32行情走勢銷售排行榜，MJD32報價。| 型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MJD32 | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP32 and TIP32C | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |   | |
MJD32 | Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信電子 | | |
MJD32 | Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | |
MJD32 | Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | |
MJD32 | Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP32 and TIP32C | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
Low voltage PNP power transistor DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
SILICON POWER TRANSISTORS Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信電子 | | ||
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. | DCCOM | | ||
PNP SURFACE MOUNT TRANSISTOR Features ? BVCEO > -100V ? IC = -3A high Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complementary NPN Type: MJD31C ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Gree | DIODES 美臺半導(dǎo)體 | | ||
TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electrically | FS | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low Speed ,Load Formed for Surface Mount Application. Applications General Purpose Amplifier. | FOSHAN 藍箭電子 | | ||
Silicon PNP epitaxial planer Transistors Features ? Designed for General Purpose Amplifier and Low Speed Switching Applications ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Comp | MCC 美微科 | | ||
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ? Designed for General Purpose Amplifier and Low Speed Switching Applications ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version in 16 mm Tape and Reel (“T4” Suffi | JIANGSU 長電科技 | | ||
isc Silicon PNP Power Transistors DESCRIPTION ? DC Current Gain -hFE = 25(Min)@ IC= -1A ? Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ? Complement to Type MJD31C ? DPAK for Surface Mount Applications ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed | ISC 無錫固電 | | ||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplif)ier and switching applications. | TGS | | ||
PN P Epitaxial Silicon Transistor DESCRIPTION ? Designed for General Purpose Amplifier and Low Speed Switching Applications ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ? Electrica | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elect | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.2V(Max) @IC= -3A ·Complement to Type MJD31C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 無錫固電 | | ||
PNP SURFACE MOUNT TRANSISTOR Features ? BVCEO > -100V ? IC = -3A high Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complementary NPN Type: MJD31C ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Gree | DIODES 美臺半導(dǎo)體 | | ||
100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elec | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > -100V ? IC = -3A high Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Comp | DIODES 美臺半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > -100V ? IC = -3A high Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Comp | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
Low voltage PNP power transistor DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Low voltage PNP power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power packa | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon PNP epitaxial planer Transistors Features ? Designed for General Purpose Amplifier and Low Speed Switching Applications ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Comp | MCC 美微科 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > -100V ? IC = -3A High Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Comp | DIODES 美臺半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > -100V ? IC = -3A High Continuous Collector Current ? ICM = -5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Comp | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
General Purpose Amplifier Low Speed Switching Applications 文件：54.75 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISC 無錫固電 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：314.61 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
isc Silicon PNP Power Transistors 文件：361.21 Kbytes Page：3 Pages | ISC 無錫固電 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：373.13 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：卷帶（TR） 描述：TRANS PNP 100V 3A TO252-3 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 | PAMDiodes Incorporated 龍鼎微龍鼎微電子（上海）有限公司 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：MJD32CA/SOT428/DPAK 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 | ETC 知名廠家 | ETC | | |
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 文件：315.53 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
100V PNP HIGH VOLTAGE TRANSISTOR 文件：433.13 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | |
MJD32產(chǎn)品屬性
- 類型
描述
- 型號
MJD32
- 制造商
Motorola Inc
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST(意法半導(dǎo)體) |
24+ |
TO-252 |
2669 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
|||
ON/安森美 |
24+ |
NA/ |
438 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
|||
ST |
23+ |
NA |
20000 |
全新原裝假一賠十 |
|||
STM |
1709+ |
TO-252 |
32500 |
普通 |
|||
ON |
10+ |
TO-252 |
2350 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
ON/安森美 |
22+ |
TO-252 |
100000 |
代理渠道/只做原裝/可含稅 |
|||
CJ/長晶 |
25+ |
TO-252 |
57488 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
|||
MOT |
99+ |
SOT252/2.5 |
4300 |
全新原裝進口自己庫存優(yōu)勢 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新現(xiàn)貨MJD32CG即刻詢購立享優(yōu)惠#長期有排單訂 |
|||
ST/意法 |
24+ |
TO-252-3 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
MJD32芯片相關(guān)品牌
MJD32規(guī)格書下載地址
MJD32參數(shù)引腳圖相關(guān)
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DdatasheetPDF頁碼索引
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