位置：首頁 > IC中文資料第10108頁 > MJD31
MJD31晶體管資料
MJD31別名：MJD31三極管、MJD31晶體管、MJD31晶體三極管
MJD31生產(chǎn)廠家：韓國三星公司
MJD31制作材料：
MJD31性質(zhì)：低頻或音頻放大 （LF）_功率放大 （PA）
MJD31封裝形式：貼片封裝
MJD31極限工作電壓：
MJD31最大電流允許值：3A
MJD31最大工作頻率：<1MHZ或未知
MJD31引腳數(shù)：3
MJD31最大耗散功率：15W
MJD31放大倍數(shù)：
MJD31圖片代號：G-217
MJD31vtest：0
MJD31htest：999900
- MJD31atest：3
MJD31wtest：15
MJD31代換 MJD31用什么型號代替：
MJD31價格
參考價格：￥1910.6839
型號：MJD3150-9 品牌：Emerson 備注：這里有MJD31多少錢，2025年最近7天走勢，今日出價，今日競價，MJD31批發(fā)/采購報價，MJD31行情走勢銷售排行榜，MJD31報價。| 型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MJD31 | General Purpose Amplifier Low Speed Switching Applications NPN Epitaxial Silicon Transistor Features ? General Purpose Amplifier ? Low Speed Switching Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP31 and TIP31C | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |   | |
MJD31 | Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信電子 | | |
MJD31 | Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | |
MJD31 | Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | |
MJD31 | Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | |
MJD31 | Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
SILICON POWER TRANSISTORS Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
General Purpose Amplifier Low Speed Switching Applications NPN Epitaxial Silicon Transistor Features ? General Purpose Amplifier ? Low Speed Switching Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP31 and TIP31C | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
NPN SURFACE MOUNT TRANSISTOR Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complementary PNP Type: MJD32C ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available | KEXIN 科信電子 | | ||
TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electri | FS | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
3A , 100V NPN Plastic Encapsulated Transistor FEATURES ? Designed for general ? Excellent DC Current Gain Characteristics | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplif)ier and switching applications. | TGS | | ||
Silicon NPN epitaxial planer Transistors Features ? Halogen free available upon request by adding suffix -HF ? Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Electrically Similar to Popular TIP31 and TIP32 | MCC | | ||
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ? Designed for General Purpose Amplifier and Low Speed Switching Applications. ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version in 16 mm Tape and Reel (“T4” Suff | JIANGSU 長電科技 | | ||
Low voltage NPN power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Low voltage NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elect | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.2V(Max) @IC= 3A ·Complement to Type MJD32C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 無錫固電 | | ||
NPN SURFACE MOUNT TRANSISTOR Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complementary PNP Type: MJD32C ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elec | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
100 V, 3 A NPN high power bipolar transistor Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? High current gain at VCE = 60 V ? Electrically similar to popular MJD31 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | | ||
100 V, 3 A NPN high power bipolar transistor Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? High current gain at VCE = 60 V ? Electrically similar to popular MJD31 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? C | DIODES 美臺半導(dǎo)體 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? C | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
Low voltage NPN power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Low voltage NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Features ? General Purpose Amplifier ? Low Speed Switching Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP31 and TIP31C | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
Silicon NPN epitaxial planer Transistors Features ? Halogen free available upon request by adding suffix -HF ? Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Electrically Similar to Popular TIP31 and TIP32 | MCC | | ||
100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complem | DIODES 美臺半導(dǎo)體 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complem | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
isc Silicon NPN Power Transistors 文件：334.23 Kbytes Page：2 Pages | ISC 無錫固電 | | ||
NPN Plastic Encapsulated Transistor 文件：78.27 Kbytes Page：1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 文件：314.68 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
封裝/外殼：TO-251-3 短引線，IPak，TO-251AA 包裝：托盤 描述：TRANS NPN 100V 3A IPAK 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 | ONSEMI 安森美半導(dǎo)體 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：372.99 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | | ||
封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：剪切帶（CT）帶盒（TB） 描述：TRANS NPN 100V 3A TO252 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 | PAMDiodes Incorporated 龍鼎微龍鼎微電子（上海）有限公司 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：100.84 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：81.61 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Power Transistors 文件：135.34 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
100V NPN HIGH VOLTAGE TRANSISTOR 文件：456.21 Kbytes Page：7 Pages | DIODES 美臺半導(dǎo)體 | |
MJD31產(chǎn)品屬性
- 類型
描述
- 型號
MJD31
- 制造商
ONSEMI
- 制造商全稱
ON Semiconductor
- 功能描述
Complementary Power Transistors
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
|||
LISION |
2016+ |
SOT-252 |
3319 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
NEXPERIA |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
|||
ON(安森美) |
2511 |
TO-252-2(DPAK) |
8752 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
|||
NK/南科功率 |
2025 |
TO-252 |
3200 |
國產(chǎn)南科 |
|||
ON/安森美 |
21+ |
DPAK |
20000 |
只做原裝,質(zhì)量保證 |
|||
ON |
2430+ |
TO252 |
8540 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
|||
ON/安森美 |
18+ |
TO-252 |
237 |
只做原裝正品 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新現(xiàn)貨MJD31CG即刻詢購立享優(yōu)惠#長期有排單訂 |
|||
ON/安森美 |
24+ |
DPAK |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
MJD31芯片相關(guān)品牌
MJD31規(guī)格書下載地址
MJD31參數(shù)引腳圖相關(guān)
- nrf24l01
- nfc芯片
- NFC
- ne555定時器
- ne555
- nand閃存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶體管
- mos管
- MOSFET
- molex連接器
- MJE1092
- MJE1091
- MJE1090
- MJE105K
- MJE105
- MJE104
- MJE103
- MJE102
- MJE101
- MJD6039(-1,T4)
- MJD6036(-1,T4)
- MJD55H11
- MJD50
- MJD47
- MJD44H11
- MJD42C
- MJD42
- MJD41C
- MJD350G
- MJD350
- MJD340G
- MJD340
- MJD32T4
- MJD32RL
- MJD32CQ
- MJD32CG
- MJD32C1
- MJD32C
- MJD32B
- MJD32
- MJD31T4
- MJD31CQ
- MJD31CG
- MJD31C1
- MJD31C
- MJD31B
- MJD30C
- MJD3055
- MJD30
- MJD29C
- MJD2955
- MJD29
- MJD253
- MJD243G
- MJD243
- MJD210G
- MJD210
- MJD200G
- MJD200
- MJD148
- MJD128
- MJD127G
- MJD127(-1,T4)
- MJD127
- MJD122I
- MJD122G
- MJD122(-1,T4)
- MJD122
- MJD117L
- MJD117G
- MJD117(-1,T4)
- MJD117
- MJD112(-1,T4)
- MJD112
- MJ921
- MJ920
- MJ901
- MJ9000
- MJ900
- MJ8505
MJD31數(shù)據(jù)表相關(guān)新聞
MIXA60W1200TED IGBT 模塊
MIXA60W1200TED IGBT 模塊 Six-Pack XPT IGBT
2023-2-23MJD44H11RLG 雙極晶體管 - 雙極結(jié)型晶體管(BJT) 8A 80V 20W NPN 進(jìn)口原裝正品
MJD44H11RLG
2022-6-13MJD32CT4G
MJD32CT4G，全新.當(dāng)天發(fā)貨或門市自取，如需了解更多產(chǎn)品信息聯(lián)系我們.零七五五.八二七三二二九一企鵝:一一七四零五二三五三，V:八七六八零五五八.
2021-7-1MJD127T4 ON原廠授權(quán)經(jīng)銷商
進(jìn)口原裝，國產(chǎn)代理，海量庫存，產(chǎn)品齊全，貨源渠道百分百正品
2020-6-18MJ11016
MJ11016，全新原裝當(dāng)天發(fā)貨或門市自取0755-82732291.
2019-12-13mjd31ct4g亞太地區(qū)代理商，絕對優(yōu)勢??！
深圳市拓億芯電子 正品銷售mjd31ct4g
2019-11-1
DdatasheetPDF頁碼索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
