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MJD122晶體管資料
MJD122別名：MJD122三極管、MJD122晶體管、MJD122晶體三極管
MJD122生產(chǎn)廠家：韓國三星公司
MJD122制作材料：Darl
MJD122性質(zhì)：低頻或音頻放大 （LF）
MJD122封裝形式：貼片封裝
MJD122極限工作電壓：
MJD122最大電流允許值：8A
MJD122最大工作頻率：<1MHZ或未知
MJD122引腳數(shù)：3
MJD122最大耗散功率：20W
MJD122放大倍數(shù)：
MJD122圖片代號：G-127
MJD122vtest：0
MJD122htest：999900
- MJD122atest：8
MJD122wtest：20
MJD122代換 MJD122用什么型號代替：
MJD122價格
參考價格：￥2.0956
型號：MJD122-1 品牌：STMicroelectronics 備注：這里有MJD122多少錢，2025年最近7天走勢，今日出價，今日競價，MJD122批發(fā)/采購報價，MJD122行情走勢銷售排行榜，MJD122報價。| 型號 | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MJD122 | Complementary Darlington Power Transistors Features ? D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications ? Electrically Similar to Popular TIP122 ? Complement to MJD127 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |   | |
MJD122 | Complementary Darlington Power Transistors Features ? D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications ? Electrically Similar to Popular TIP122 ? Complement to MJD127 | ONSEMI 安森美半導(dǎo)體 | | |
MJD122 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | |
MJD122 | Silicon NPN epitaxial planer Transistors Features ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor | MCC | | |
MJD122 | NPN PLASTIC ENCAPSULATE TRANSISTORS Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C | WEITRON | | |
MJD122 | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. | DCCOM 道全 | | |
MJD122 | isc Silicon NPN Darlington Power Transistor DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo | ISC 無錫固電 | | |
MJD122 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) ? Sur | Motorola 摩托羅拉 | | |
MJD122 | Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無錫固電 | | |
MJD122 | TRANSISTOR(NPN) TRANSISTOR（NPN） FEATURES ? High DC Current Gain ? Electrically Similar to Popular TIP122 ? Built-in a Damper Diode at E-C | JIANGSU 長電科技 | | |
MJD122 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications | TGS | | |
MJD122 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications | TGS | | |
MJD122 | Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無錫固電 | | |
MJD122 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半導(dǎo)體 | | |
MJD122 | TO-252-2L P lastic-Encapsulate Transistors TRANSISTOR（ NPN） Feature ● High DC Current Gain ● Electrically Similar to Popular TIP122 ● Built-in a Damper Diode at E-C | HDSEMI 海德半導(dǎo)體 | | |
MJD122 | NPN Silicon Darlington Transistor FEATURES ? High DC Current Gain ? Electrically Similar to Popular TIP122 ? Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements. | FS | | |
MJD122 | Low voltage power Darlington transistor 文件：232.98 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | | |
MJD122 | 中等功率雙極型晶體管 | MCC | | |
MJD122 | 達(dá)林頓管 | JSCJ 長晶科技 | | |
MJD122 | 互補(bǔ)硅功率達(dá)林頓晶體管 | STMICROELECTRONICS 意法半導(dǎo)體 | | |
MJD122 | isc Silicon NPN Darlington Power Transistor 文件：315.34 Kbytes Page：2 Pages | ISC 無錫固電 | | |
MJD122 | Silicon NPN epitaxial planerTransistors 文件：337.92 Kbytes Page：3 Pages | MCC | | |
MJD122 | Complementary Darlington Power Transistor 文件：136.31 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | |
MJD122 | Complementary Darlington Power Transistor 文件：106.5 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | |
MJD122 | Complementary Darlington Power Transistor 文件：87.53 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) ? Sur | Motorola 摩托羅拉 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無錫固電 | | ||
Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無錫固電 | | ||
NPN Silicon Darlington Transistor FEATURES ? High DC Current Gain ? Electrically Similar to Popular TIP122 ? Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements. | FS | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“–1” Suffix) ? Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) ? Sur | Motorola 摩托羅拉 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Silicon NPN epitaxial planer Transistors Features ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Halogen Free Available Upon Request By Adding Suffix -HF ? Moisture Sensitivity Level 1 ? Epoxy Meets UL 94 V-0 Flammability Rating ? Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor | MCC | | ||
Complementary Darlington Power Transistor 文件：87.53 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Low voltage power Darlington transistor 文件：232.98 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
NPN Silicon Darlington Transistor 文件：157.4 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
Complementary Darlington Power Transistor 文件：136.31 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：106.5 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon NPN epitaxial planerTransistors 文件：337.92 Kbytes Page：3 Pages | MCC | | ||
isc Silicon NPN Darlington Power Transistor 文件：315.34 Kbytes Page：2 Pages | ISC 無錫固電 | | ||
封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：TRANS NPN DARL 100V 8A DPAK 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 | ONSEMI 安森美半導(dǎo)體 | | ||
封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：散裝 描述：TRANS NPN DARL 100V 8A DPAK 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：136.31 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：106.5 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：87.53 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：136.31 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：87.53 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：87.53 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：106.5 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistor 文件：136.31 Kbytes Page：7 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
1 1/16 FEATURES ? Gangable up to 6 sections ? Extra taps on request ? Bushing or servo mount types available ? Ohmic value range: 5 ? up to 100 k? ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | ||
102/122 Series Circuit Board Mount Fuse Clips for 1/4” Diameter Fuses 文件：884.55 Kbytes Page：2 Pages | Littelfuse 力特 | | ||
General Purpose Tweezers 文件：3.67611 Mbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | | ||
MAGNETIC-LATCHING 文件：131.84 Kbytes Page：3 Pages | TELEDYNE 華特力科 | | ||
Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10) 文件：124.92 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | |
MJD122產(chǎn)品屬性
- 類型
描述
- 型號
MJD122
- 功能描述
達(dá)林頓晶體管 8A 100V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶體管極性
NPN 集電極—發(fā)射極最大電壓
- VCEO
50 V 發(fā)射極 - 基極電壓
- VEBO
集電極—基極電壓
- 最大直流電集電極電流
0.5 A
- 最大工作溫度
+ 150 C
- 安裝風(fēng)格
SMD/SMT
- 封裝/箱體
SOIC-18
- 封裝
Reel
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO252 |
33500 |
全新進(jìn)口原裝現(xiàn)貨,假一罰十 |
|||
CJ/長晶 |
24+ |
TO-252 |
29785 |
只做全新原裝進(jìn)口現(xiàn)貨 |
|||
ST/意法半導(dǎo)體 |
25+ |
TO-252 |
4650 |
絕對原裝公司現(xiàn)貨 |
|||
ST(意法) |
24+ |
TO-252-2(DPAK) |
12048 |
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div> |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新現(xiàn)貨MJD122/MJD127即刻詢購立享優(yōu)惠#長期有排單訂 |
|||
ON |
23+ |
DPAK |
56000 |
||||
ON |
2025+ |
TO-252-3 |
32560 |
原裝優(yōu)勢絕對有貨 |
|||
ON |
15+ |
原廠原裝 |
10275 |
進(jìn)口原裝現(xiàn)貨假一賠十 |
|||
Onsemi/安森美 |
25+ |
TO-252 |
30000 |
||||
ON |
24+ |
TO252 |
55620 |
全新原裝現(xiàn)貨/假一罰百! |
MJD122規(guī)格書下載地址
MJD122參數(shù)引腳圖相關(guān)
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