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MBRF20200CT價(jià)格
參考價(jià)格：￥4.4421
型號(hào)：MBRF20200CTG 品牌：ONSemi 備注：這里有MBRF20200CT多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MBRF20200CT批發(fā)/采購(gòu)報(bào)價(jià)，MBRF20200CT行情走勢(shì)銷售排行榜，MBRF20200CT報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MBRF20200CT | SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半導(dǎo)體 |   | |
MBRF20200CT | SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES ? Average Output Rectified Current : IO=20A. ? Repetitive Peak Reverse Voltage : VRRM=200V. ? Fast Reverse Recovery Time : trr=35ns. | KEC KEC(Korea Electronics) | | |
MBRF20200CT | For General Purpose Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in | Good-Ark 固锝電子 | | |
MBRF20200CT | Low forward voltage drop Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro | Littelfuse 力特 | | |
MBRF20200CT | SWITCHMODE??Schottky Power Rectifirer The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | Motorola 摩托羅拉 | | |
MBRF20200CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | |
MBRF20200CT | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss， High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body | DACHANG 大昌電子 | | |
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficie | DIOTECH | | |
MBRF20200CT | 20A SCHOTTKY BARRIER DIODE
| FORMOSA 美麗微半導(dǎo)體 | | |
MBRF20200CT | 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Full Pack High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌電子德昌電子（集團(tuán)）有限公司 | | |
MBRF20200CT | TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | | |
MBRF20200CT | Schottky Barrier Rectifiers Reverse Voltage: 150---200V Forward Current: 20A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop, low swithing losses ◇ High surge capacity ◇ For use in low voltage, high frequency inverters free wheeling, and polarity protecti | LUGUANG 魯光電子 | | |
MBRF20200CT | SCHOTTKY RECTIFIER Features: ? 150 °C TJ operation ? Center tap configuration ? Low forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? | SMC 桑德斯微電子 | | |
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current -20.0 Amperes FEATURES ? High surge capacity. ? For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ? Metal silicon junction,majority carrier conduction. ? High current capability,low forwa | CHENDA 辰達(dá)半導(dǎo)體 | | |
MBRF20200CT | SCHOTTKY BARRIER RECTIFIERS Reverse Voltage: 150---200V Forward Current: 20A FEATURES ? Metal-Semiconductor junction with guard ring ? Epitaxial construction ? Low forward voltage drop, low swithing losses ? High surge capacity ? For use in low voltage, high frequency inverters free wheeling, and polarity protecti | DSK | | |
MBRF20200CT | 20 Ampere Insulated Dual Common Cathode Schottky Half Bridge Rectifiers Features ? Plastic material used carries Underwriters Laboratory Classifications 94V-0 ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency ? High current capability, low forward voltage drop ? High surge capability ? For use in low voltage, high freque | THINKISEMI 思祁半導(dǎo)體 | | |
MBRF20200CT | Schottky Diode in a TO-220F Plastic Package Descriptions Schottky Diode in a TO-220F Plastic Package. Features Low power loss,high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. | FOSHAN 藍(lán)箭電子 | | |
MBRF20200CT | 20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency. ? High current capability ? For use in low voltage, high frequency | DYELECDIYI Electronic Technology Co., Ltd. 迪一電子山東迪一電子科技有限公司 | | |
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?frequency s | KERSEMI | | |
MBRF20200CT | SCHOTTKY BARRIER TYPE DIODE The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?frequency s | KERSEMI | | |
MBRF20200CT | MBRF20200CT (CTR) SCHOTTKY RECTIFIER Features 175?C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb ? Fre | SMCDIODE 桑德斯微電子 | | |
MBRF20200CT | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三陽(yáng)電子 | | |
MBRF20200CT | 20A High Power Schottky Barrier Rectifiersnull ■ Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part, | CITC 竹懋科技 | | |
MBRF20200CT | Dual Common-Cathode Ultra Low VF Schottky Rectifier Features ? Guard ring for overvoltage protection ? Lower power losses, high efficiency ? Low forward voltage drop ? Low leakage current ? High forward surge capability ? High frequency operation ? Solder Dip 260 °C, 40 s ? Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC | BWTECH | | |
MBRF20200CT | Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A 文件：214.07 Kbytes Page：3 Pages | FS | | |
MBRF20200CT | schottky-5a-and-above | DIODES 美臺(tái)半導(dǎo)體 | | |
MBRF20200CT | Schottky Power Rectifier, Switch-mode, 20 A, 200 V | ONSEMI 安森美半導(dǎo)體 | | |
MBRF20200CT | 封裝/外殼：TO-220-3 全封裝，隔離接片 包裝：管件 描述：DIODE SCHOTTKY 200V 10A ITO220AB 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 | ETC 知名廠家 | ETC | |
MBRF20200CT | 封裝/外殼：TO-220-3 全封裝，隔離接片 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：DIODE ARRAY SCHOTTKY 200V ITO220 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 | SMCDIODE 桑德斯微電子 | | |
MBRF20200CT | Schottky Barrier Rectifier 文件：124.26 Kbytes Page：2 Pages | DACHANG 大昌電子 | | |
MBRF20200CT | Isolation 20.0 AMPS. Schottky Barrier Rectifiers 文件：122.87 Kbytes Page：2 Pages | TSC 臺(tái)灣半導(dǎo)體 | | |
MBRF20200CT | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件：183.36 Kbytes Page：2 Pages | TSC 臺(tái)灣半導(dǎo)體 | | |
MBRF20200CT | Dual Common Cathode Schottky Rectifier 文件：231.87 Kbytes Page：4 Pages | TSC 臺(tái)灣半導(dǎo)體 | | |
MBRF20200CT | SCHOTTKY BARRIER TYPE DIODE 文件：43.69 Kbytes Page：2 Pages | KEC KEC(Korea Electronics) | | |
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美臺(tái)半導(dǎo)體 | | ||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency. ? High current capability ? For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一電子山東迪一電子科技有限公司 | | ||
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?frequency s | KERSEMI | | ||
Switch-mode Schottky Power Rectifier The Switch?mode Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?freque | ONSEMI 安森美半導(dǎo)體 | | ||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半導(dǎo)體 | | ||
Switch-mode Schottky Power Rectifier The Switch?mode Power Rectifier employs the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low?voltage, high?freque | ONSEMI 安森美半導(dǎo)體 | | ||
SMD Schottky Barrier Rectifiers Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla | COMCHIP 典琦 | | ||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美臺(tái)半導(dǎo)體 | | ||
20A SCHOTTKY BARRIER RECTIFIER Description and Applications This Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications. It is ideally suited for use as: ● Polarity Protection Diode ● Re-Circulating Diode ● Switching Diode Features and Benefits ● Guard Ring Die Construction for | DIODES 美臺(tái)半導(dǎo)體 | | ||
20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp | THINKISEMI 思祁半導(dǎo)體 | | ||
肖特基二極管 | Puolop 迪浦 | | ||
SCHOTTKY BARRIER TYPE DIODE 文件：43.69 Kbytes Page：2 Pages | KEC KEC(Korea Electronics) | | ||
Switch-mode Schottky Power Rectifier 文件：59.57 Kbytes Page：4 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
SCHOTTKY RECTIFIER 文件：134.72 Kbytes Page：4 Pages | SMC 桑德斯微電子 | | ||
Low forward voltage drop 文件：622.27 Kbytes Page：3 Pages | Littelfuse 力特 | | ||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半導(dǎo)體 | | ||
Fast Recovery Rectifier 文件：258.32 Kbytes Page：2 Pages | ISC 無(wú)錫固電 | | ||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件：778.85 Kbytes Page：2 Pages | THINKISEMI 思祁半導(dǎo)體 | | ||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件：50.48 Kbytes Page：3 Pages | BITECH 瑞谷拜特 | | ||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件：50.48 Kbytes Page：3 Pages | BITECH 瑞谷拜特 | |
MBRF20200CT產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MBRF20200CT
- 功能描述
肖特基二極管與整流器 20 Amp 200 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 產(chǎn)品
Schottky Diodes
- 峰值反向電壓
2 V
- 正向連續(xù)電流
50 mA
- 配置
Crossover Quad
- 正向電壓下降
370 mV
- 最大功率耗散
75 mW
- 工作溫度范圍
- 65 C to + 150 C
- 安裝風(fēng)格
SMD/SMT
- 封裝/箱體
SOT-143
- 封裝
Reel
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO-220FP |
5524 |
原裝正品,現(xiàn)貨庫(kù)存,1小時(shí)內(nèi)發(fā)貨 |
|||
三年內(nèi) |
1983 |
只做原裝正品 |
|||||
SSG/MOSPEC |
25+ |
TO220F |
54648 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià) |
|||
ON |
24+/25+ |
600 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
||||
臺(tái)半/光寶 |
20+ |
TO220F-3 |
38560 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
|||
ON |
25+ |
TO-220 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
|||
ON(安森美) |
25+ |
標(biāo)準(zhǔn)封裝 |
8000 |
原裝，請(qǐng)咨詢 |
|||
Slkor/薩科微 |
24+ |
TO-220F |
50000 |
Slkor/薩科微一級(jí)代理,價(jià)格優(yōu)勢(shì) |
|||
ON(安森美) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
|||
ON/安森美 |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開(kāi)票! |
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DdatasheetPDF頁(yè)碼索引
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