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MBRB20200CT價(jià)格
參考價(jià)格：￥2.0738
型號(hào)：MBRB20200CT 品牌：Diodes 備注：這里有MBRB20200CT多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MBRB20200CT批發(fā)/采購(gòu)報(bào)價(jià)，MBRB20200CT行情走勢(shì)銷售排行榜，MBRB20200CT報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MBRB20200CT | SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半導(dǎo)體 |   | |
MBRB20200CT | Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | | |
MBRB20200CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | |
MBRB20200CT | SWIRCHMODE?? Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k | Motorola 摩托羅拉 | | |
MBRB20200CT | 20A Surface Mount High Power Schottky Barrier Rectifiers Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free part, ex | CITC 竹懋科技 | | |
MBRB20200CT | 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：DIODE SCHOTTKY 200V 20A D2PAK 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 | PAMDiodes Incorporated 龍鼎微龍鼎微電子（上海）有限公司 | | |
MBRB20200CT | 肖特基二極管 | MCC | | |
MBRB20200CT | 肖特基二極管 | JSCJ 長(zhǎng)晶科技 | | |
MBRB20200CT | 肖特基勢(shì)壘整流器，200 V，20 A | ONSEMI 安森美半導(dǎo)體 | | |
MBRB20200CT | Schottky Barrier Rectifier 文件：279.5 Kbytes Page：2 Pages | ISC 無錫固電 | | |
MBRB20200CT | 20.0 Ampere Surface Mount Schottky Barrier Rectifiers 文件：376.82 Kbytes Page：2 Pages | THINKISEMI 思祁半導(dǎo)體 | | |
MBRB20200CT | Schottky Diode in a TO-263 Plastic Package 文件：751.65 Kbytes Page：6 Pages | FOSHAN 藍(lán)箭電子 | | |
MBRB20200CT | Dual Schottky Barrier Rectifier Reverse Voltage 200 Volts , Forward Current 20A 文件：222.97 Kbytes Page：3 Pages | FS | | |
MBRB20200CT | 封裝/外殼：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：SCHOTTKY DIODE 200V 20A TO-263 分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 | ETC 知名廠家 | ETC | |
MBRB20200CT | 20A SCHOTTKY BARRIER RECTIFIER 文件：606.3 Kbytes Page：6 Pages | DIODES 美臺(tái)半導(dǎo)體 | | |
MBRB20200CT | Product Specification 文件：512.35 Kbytes Page：7 Pages | Good-Ark 固锝電子 | | |
MBRB20200CT | 20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 文件：387.24 Kbytes Page：2 Pages | MCC | | |
MBRB20200CT | 20 Amp High Voltage Power Schottky Barrier Rectifier 200Volts 文件：218.45 Kbytes Page：3 Pages | MCC | | |
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半導(dǎo)體 | | ||
SWITCHMODE Power Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半導(dǎo)體 | | ||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半導(dǎo)體 | | ||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半導(dǎo)體 | | ||
Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | | ||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半導(dǎo)體 | | ||
SWITCHMODE Power Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半導(dǎo)體 | | ||
SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 | ONSEMI 安森美半導(dǎo)體 | | ||
Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state?of?the?art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from | ONSEMI 安森美半導(dǎo)體 | | ||
ThinkiSemi 20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers Features Low forward voltage drop ThinkiSemi matured ESD planar schottky High current capability High surge current capability Low reverse leakage current Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sou | THINKISEMI 思祁半導(dǎo)體 | | ||
20 Amp High Voltage Power Schottky Barrier Rectifier 200Volts 文件：218.45 Kbytes Page：3 Pages | MCC | | ||
20A SCHOTTKY BARRIER RECTIFIER 文件：606.3 Kbytes Page：6 Pages | DIODES 美臺(tái)半導(dǎo)體 | | ||
20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky 文件：249.6 Kbytes Page：3 Pages | MCC | | ||
20A SCHOTTKY BARRIER RECTIFIER 文件：606.3 Kbytes Page：6 Pages | DIODES 美臺(tái)半導(dǎo)體 | | ||
20.0 A Schottky Barrier Rectifier 文件：348.53 Kbytes Page：2 Pages | DGNJDZ 南晶電子 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：1.2203 Mbytes Page：4 Pages | JIANGSU 長(zhǎng)電科技 | | ||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件：1.05296 Mbytes Page：2 Pages | THINKISEMI 思祁半導(dǎo)體 | | ||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s | ONSEMI 安森美半導(dǎo)體 | | ||
Fast Recovery Rectifier 文件：258.32 Kbytes Page：2 Pages | ISC 無錫固電 | | ||
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers 文件：778.85 Kbytes Page：2 Pages | THINKISEMI 思祁半導(dǎo)體 | | ||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件：50.48 Kbytes Page：3 Pages | BITECH | | ||
Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor 文件：50.48 Kbytes Page：3 Pages | BITECH | |
MBRB20200CT產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MBRB20200CT
- 功能描述
肖特基二極管與整流器 20A 200
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 產(chǎn)品
Schottky Diodes
- 峰值反向電壓
2 V
- 正向連續(xù)電流
50 mA
- 配置
Crossover Quad
- 正向電壓下降
370 mV
- 最大功率耗散
75 mW
- 工作溫度范圍
- 65 C to + 150 C
- 安裝風(fēng)格
SMD/SMT
- 封裝/箱體
SOT-143
- 封裝
Reel
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
25+ |
TO-220 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
|||
ON(安森美) |
24+ |
D2PAK-3 |
8834 |
只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣原裝現(xiàn)貨 |
|||
ONSEMI/安森美 |
25+ |
D2PAK-3 |
90000 |
ONSEMI/安森美全新特價(jià)MBRB20200CTT4G即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
2450+ |
TO-263 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
||||
ON |
17+ |
TO263 |
80 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
ON |
23+ |
N/A |
10000 |
正規(guī)渠道,只有原裝! |
|||
ON(安森美) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
|||
ON/IR |
23+ |
TO-263 |
6893 |
||||
揚(yáng)杰 |
25+ |
TO-263 |
10000 |
揚(yáng)杰原廠一級(jí)代理商,價(jià)格優(yōu)勢(shì)! |
|||
ON/安森美 |
24+ |
TO-263 |
505348 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
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肖特基二極管與整流器 10A 45V
2019-8-6
DdatasheetPDF頁碼索引
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