位置:首頁 > IC中文資料第6220頁 > MBM29LV160T-90PN
型號 | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
---|---|---|---|---|
MBM29LV160T-90PN | 16M (2M x? 8/1M x 16) BIT GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (I), 46-pin SON, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system wit | Fujitsu 富士通 | ||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚科技 |
MBM29LV160T-90PN產(chǎn)品屬性
- 類型
描述
- 型號
MBM29LV160T-90PN
- 制造商
FUJITSU
- 制造商全稱
Fujitsu Component Limited.
- 功能描述
16M(2M xⅴ 8/1M x 16) BIT
IC供應商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FUJ |
24+ |
SMD |
20000 |
一級代理原裝現(xiàn)貨假一罰十 |
|||
FUJ |
02/03+ |
TSOP |
1993 |
全新原裝100真實現(xiàn)貨供應 |
|||
FUJITSU |
23+ |
QFN |
12800 |
公司只有原裝 歡迎來電咨詢。 |
|||
FUJITSU- |
25+ |
TSOP |
3000 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
|||
FUJITSU |
2023+ |
TSOP |
3000 |
進口原裝現(xiàn)貨 |
|||
FUJITSU |
23+ |
QFN |
1475 |
全新原裝正品現(xiàn)貨,支持訂貨 |
|||
FUJTSU |
23+ |
TSSOP |
9516 |
||||
FUJITSU |
24+ |
TSSOP |
5632 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
|||
FUJITSU/富士通 |
24+ |
FBGA48 |
3331 |
大批量供應優(yōu)勢庫存熱賣 |
|||
現(xiàn)貨FUJITSU |
25+ |
TSOP |
79 |
全新原裝現(xiàn)貨庫存 |
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DdatasheetPDF頁碼索引
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