位置:首頁 > IC中文資料第6220頁 > MBM29LV160B-90PCV
型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
---|---|---|---|---|
MBM29LV160B-90PCV | 16M (2M x? 8/1M x 16) BIT GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (I), 46-pin SON, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system wit | Fujitsu 富士通 | ||
MBM29LV160B-90PCV | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT ■ GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the stan | spansionSPANSION 飛索飛索半導(dǎo)體 | ||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚(yáng)科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚(yáng)科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚(yáng)科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚(yáng)科技 | |||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜揚(yáng)科技 |
MBM29LV160B-90PCV產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MBM29LV160B-90PCV
- 制造商
FUJITSU
- 制造商全稱
Fujitsu Component Limited.
- 功能描述
16M(2M xⅴ 8/1M x 16) BIT
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FUJITSU/富士通 |
24+ |
NA/ |
700 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
|||
FUJITSU |
2016+ |
TSOP-48 |
8880 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
FUJI |
01+ |
TSOP48 |
3560 |
全新原裝進(jìn)口自己庫存優(yōu)勢(shì) |
|||
MALAYSIA |
24+ |
SOP |
20000 |
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅!! |
|||
FUJI |
2021+ |
60000 |
原裝現(xiàn)貨,歡迎詢價(jià) |
||||
FUJITSU |
25+23+ |
TSOP |
40371 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
|||
FUJ |
TSOP |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨 |
||||
FUJI |
22+ |
TSOP |
3000 |
原裝正品,支持實(shí)單 |
|||
FUJITSU |
24+ |
TSOP48 |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理 |
|||
24+ |
3000 |
公司現(xiàn)貨 |
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