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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
MBM29LV160B-90PBT

16M (2M x? 8/1M x 16) BIT

GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (I), 46-pin SON, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system wit

Fujitsu

富士通

MBM29LV160B-90PBT

FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

■ GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the stan

spansionSPANSION

飛索飛索半導體

16M (2M x? 8/1M x 16) BIT

GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (I), 46-pin SON, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system wit

Fujitsu

富士通

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a

EON

宜揚科技

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a

EON

宜揚科技

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a

EON

宜揚科技

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a

EON

宜揚科技

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a

EON

宜揚科技

MBM29LV160B-90PBT產(chǎn)品屬性

  • 類型

    描述

  • 型號

    MBM29LV160B-90PBT

  • 制造商

    SPANSION

  • 制造商全稱

    SPANSION

  • 功能描述

    FLASH MEMORY CMOS 16M(2M x 8/1M x 16) BIT

更新時間：2025-9-13 22:58:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
FUJITSU
2016+
TSOP-48
8880
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
FUJI
01+
TSOP48
3560
全新原裝進口自己庫存優(yōu)勢
MALAYSIA
24+
SOP
20000
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div>
FUJI
2021+
60000
原裝現(xiàn)貨，歡迎詢價
FUJITSU
25+23+
TSOP
40371
絕對原裝正品全新進口深圳現(xiàn)貨
FUJ
TSOP
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
FUJI
22+
TSOP
3000
原裝正品,支持實單
FUJITSU
24+
TSOP48
90000
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理
24+
3000
公司現(xiàn)貨
FUJISTU
6200
TSOP
17
100%原裝正品現(xiàn)貨

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