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MB81價(jià)格
參考價(jià)格：￥0.0000
型號(hào)：MB814405D-60PJN 品牌：Fujitsu 備注：這里有MB81多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MB81批發(fā)/采購報(bào)價(jià)，MB81行情走勢(shì)銷售排行榜，MB81報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MB81 | 8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Features ? Mounting Hole For #6 Screw ? Any Mounting Position ? Surge Rating Of 125 Amps ? Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 ? Lead Free Finish/RoHS Compliant (NOTE 1)(P Suffix designates RoHS Compliant. See ordering information) | MCC 美微科 |   | |
MB81 | 8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 文件：123.08 Kbytes Page：3 Pages | MCC 美微科 | | |
MB81 | 封裝/外殼：4-方形，BR-6 包裝：管件 描述：BRIDGE RECT 1PHASE 100V 8A BR-6 分立半導(dǎo)體產(chǎn)品 二極管 - 橋式整流器 | MCC 美微科 | | |
MB81 | 包裝：散裝 描述：ACCY MOUNT BMM 3/4 58A RF/IF，射頻/中頻和 RFID RF 配件 | ETC 知名廠家 | ETC | |
8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Features ? Mounting Hole For #6 Screw ? Any Mounting Position ? Surge Rating Of 125 Amps ? Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 ? Lead Free Finish/RoHS Compliant (NOTE 1)(P Suffix designates RoHS Compliant. See ordering information) | MCC 美微科 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O ? For surface mounted applications in order to optimize board space ? Low power loss, high efficiency ? High surge capacity ? Lead free in compliance with EU RoHS 2011/65/EU directive ? Green molding com | PANJIT 強(qiáng)茂 | | ||
MOS Memories Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio | Fujitsu 富士通 | | ||
MOS Memories Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio | Fujitsu 富士通 | | ||
MOS Memories Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio | Fujitsu 富士通 | | ||
MOS Memories Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio | Fujitsu 富士通 | | ||
Cutler- Hammer Features, Benefits and Functions n Both BR and CH type branch circuit breaker styles available. n Meets latest NEC wire bending space requirements. n Slotted sealing screws at hub with sealing provision provided. n Surface units are supplied with mounting tabs. n Semi-flush units ar | EATON 伊頓 | | ||
Cutler- Hammer Features, Benefits and Functions n Both BR and CH type branch circuit breaker styles available. n Meets latest NEC wire bending space requirements. n Slotted sealing screws at hub with sealing provision provided. n Surface units are supplied with mounting tabs. n Semi-flush units ar | EATON 伊頓 | | ||
Cutler- Hammer Features, Benefits and Functions n Both BR and CH type branch circuit breaker styles available. n Meets latest NEC wire bending space requirements. n Slotted sealing screws at hub with sealing provision provided. n Surface units are supplied with mounting tabs. n Semi-flush units ar | EATON 伊頓 | | ||
Cutler- Hammer Features, Benefits and Functions n Both BR and CH type branch circuit breaker styles available. n Meets latest NEC wire bending space requirements. n Slotted sealing screws at hub with sealing provision provided. n Surface units are supplied with mounting tabs. n Semi-flush units ar | EATON 伊頓 | | ||
Cutler- Hammer Features, Benefits and Functions n Both BR and CH type branch circuit breaker styles available. n Meets latest NEC wire bending space requirements. n Slotted sealing screws at hub with sealing provision provided. n Surface units are supplied with mounting tabs. n Semi-flush units ar | EATON 伊頓 | | ||
Cutler- Hammer Features, Benefits and Functions n Both BR and CH type branch circuit breaker styles available. n Meets latest NEC wire bending space requirements. n Slotted sealing screws at hub with sealing provision provided. n Surface units are supplied with mounting tabs. n Semi-flush units ar | EATON 伊頓 | | ||
Cutler- Hammer Features, Benefits and Functions n Both BR and CH type branch circuit breaker styles available. n Meets latest NEC wire bending space requirements. n Slotted sealing screws at hub with sealing provision provided. n Surface units are supplied with mounting tabs. n Semi-flush units ar | EATON 伊頓 | | ||
4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory ■ DESCRIPTION The Fujitsu MB81F643242C is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242C features a fully synchronous ope | Fujitsu 富士通 | | ||
4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory ■ DESCRIPTION The Fujitsu MB81F643242C is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242C features a fully synchronous ope | Fujitsu 富士通 | | ||
4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory ■ DESCRIPTION The Fujitsu MB81F643242C is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242C features a fully synchronous ope | Fujitsu 富士通 | | ||
4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory ■ DESCRIPTION The Fujitsu MB81F643242C is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242C features a fully synchronous ope | Fujitsu 富士通 | | ||
8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 文件：123.08 Kbytes Page：3 Pages | MCC 美微科 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 文件：307.44 Kbytes Page：5 Pages | PANJIT 強(qiáng)茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 文件：307.44 Kbytes Page：5 Pages | PANJIT 強(qiáng)茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 文件：307.44 Kbytes Page：5 Pages | PANJIT 強(qiáng)茂 | | ||
8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 文件：123.08 Kbytes Page：3 Pages | MCC 美微科 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
HIGH FREQUENCY CERAMIC CAPACITORS 文件：240.39 Kbytes Page：6 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | | ||
2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM 文件：580.96 Kbytes Page：27 Pages | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | | ||
2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM 文件：580.96 Kbytes Page：27 Pages | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | | ||
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 文件：1.09638 Mbytes Page：22 Pages | Fujitsu 富士通 | | ||
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 文件：1.09638 Mbytes Page：22 Pages | Fujitsu 富士通 | | ||
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 文件：1.09638 Mbytes Page：22 Pages | Fujitsu 富士通 | | ||
8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts 文件：123.08 Kbytes Page：3 Pages | MCC 美微科 | | ||
CMOS 256K-BIT HIGH-SPEED SRAM 文件：361.23 Kbytes Page：9 Pages | Fujitsu 富士通 | | ||
CMOS 256K-BIT HIGH-SPEED SRAM 文件：361.23 Kbytes Page：9 Pages | Fujitsu 富士通 | | ||
CMOS 256K-BIT HIGH-SPEED SRAM 文件：361.23 Kbytes Page：9 Pages | Fujitsu 富士通 | | ||
MEMORY Consumer FCRAM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP 文件：398.02 Kbytes Page：52 Pages | Fujitsu 富士通 | | ||
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP 文件：403.29 Kbytes Page：52 Pages | Fujitsu 富士通 | | ||
MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP 文件：444.74 Kbytes Page：60 Pages | Fujitsu 富士通 | | ||
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP 文件：431.05 Kbytes Page：60 Pages | Fujitsu 富士通 | | ||
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP 文件：431.05 Kbytes Page：60 Pages | Fujitsu 富士通 | | ||
128 M-BIT (4-BANK ? 1 M-WORD ? 32-BIT) SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 文件：195.32 Kbytes Page：42 Pages | Fujitsu 富士通 | | ||
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 文件：551.16 Kbytes Page：43 Pages | Fujitsu 富士通 | |
| 替換型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
16,384 X 1 BIT DYNAMIC RAM | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | | |
16,384 X 1 BIT DYNAMIC RAM | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | | |
16384-BIT (16384 X 1 ) DYNAMIC RAM | NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司 | NSC | | |
16,384-BIT DYNAMIC RANDOM-ACCESS MEMORY | TI 德州儀器 | TI | | |
16,384-BIT DYNAMIC RANDOM-ACCESS MEMORY | TI 德州儀器 | TI | |
MB81產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MB81
- 功能描述
ACCY MOUNT BMM 3/4 58A
- RoHS
是
- 類別
RF/IF 和 RFID >> RF配件
- 系列
*
- 標(biāo)準(zhǔn)包裝
1
- 系列
*
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FUJI/富士電機(jī) |
24+ |
NA/ |
1865 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
|||
FUJI |
2016+ |
SOJ |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
FUJITSU/富士通 |
1950+ |
TSOP28 |
4856 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
|||
FUJITSU/富士通 |
2023+ |
SOP28 |
6893 |
專注全新正品,優(yōu)勢(shì)現(xiàn)貨供應(yīng) |
|||
FUJITSU |
25+23+ |
DIP |
40691 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
|||
FOS |
22+ |
NA |
100000 |
代理渠道/只做原裝/可含稅 |
|||
FUJITSU/富士通 |
25+ |
DIP-18 |
54648 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià) |
|||
FUJITSU/富士通 |
24+ |
ZIP |
157086 |
明嘉萊只做原裝正品現(xiàn)貨 |
|||
FUJ |
24+ |
DIP18 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！ |
|||
FUJITSU/富士通 |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
MB81芯片相關(guān)品牌
MB81規(guī)格書下載地址
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屬性 參數(shù)值 商品目錄 整流橋 反向峰值電壓 600V 平均整流電流（Io） 500mA 正向壓降（Vf） 1V @ 500mA
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描述 MB3891是擬用于未來的GSM手機(jī)，雙頻手機(jī)和雙模手機(jī)。它包含所有必要的功能，以支持這些手機(jī)的所有數(shù)字，模擬和RF模塊。電荷泵包括一個(gè)邏輯電平轉(zhuǎn)換電路內(nèi)置于支持SIM卡的兩個(gè)3和5伏技術(shù)（智能卡）。該電路包含一個(gè)可充電的鋰實(shí)時(shí)時(shí)鐘鈕扣電池充電器。一個(gè)復(fù)雜的控制電路是建立在主復(fù)位生成并打開和關(guān)閉不同的LDO的。... 特征 •電源電壓范圍：3 V至5.5 V •低功耗待機(jī)電流：400毫安（最大） •6通道低飽和電壓型系列穩(wěn)壓器：2.1 V / 2號(hào)通道，2.8 V / 3號(hào)通
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2013-2-12
DdatasheetPDF頁碼索引
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