国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
M68AW128M

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

FEATURES SUMMARY ■ SUPPLY VOLTAGE: 2.7 to 3.3V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O ■ AUTOMATIC POWER DOWN

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

封裝/外殼:48-TFBGA 包裝:管件 描述:IC SRAM 2MBIT PARALLEL 48TFBGA 集成電路(IC) 存儲器

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Mbit (128K x16) 3.0V Asynchronous SRAM

文件:335.61 Kbytes Page:22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

M68AW128M產(chǎn)品屬性

  • 類型

    描述

  • 型號

    M68AW128M

  • 制造商

    STMICROELECTRONICS

  • 制造商全稱

    STMicroelectronics

  • 功能描述

    2 Mbit(128K x16) 3.0V Asynchronous SRAM

更新時(shí)間:2025-8-22 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價(jià)格
ST/意法
24+
NA/
400
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
ST
04+
SOP44
938
全新原裝進(jìn)口自己庫存優(yōu)勢
ST
1245+
BGA
659
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
ST
17+
SOP44
9988
只做原裝進(jìn)口,自己庫存
ST
20+
TSSOP
2960
誠信交易大量庫存現(xiàn)貨
STM
23+
BGAQFP
8659
原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢.
STMicroelectronics
18+
ICSRAM2MBIT70NS48TFBGA
6800
公司原裝現(xiàn)貨
ST
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價(jià)熱賣!
ST/意法
22+
N
30000
十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售!

M68AW128M芯片相關(guān)品牌

M68AW128M數(shù)據(jù)表相關(guān)新聞