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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
M5M51008BFP

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

M5M51008BFP

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

Mitsubishi

三菱電機

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

Mitsubishi

三菱電機

M5M51008BFP產(chǎn)品屬性

  • 類型

    描述

  • 型號

    M5M51008BFP

  • 制造商

    MITSUBISHI

  • 制造商全稱

    Mitsubishi Electric Semiconductor

  • 功能描述

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

更新時間：2025-9-15 23:01:00
IC供應商 芯片型號 品牌 批號 封裝 庫存 備注 價格
MITSUBISHI/三菱
24+
NA/
97
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
MITSUBI
2016+
SOP32
2600
本公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
MIT
23+
SOP
20000
全新原裝假一賠十
RENESAS
三年內(nèi)
1983
只做原裝正品
MIT
97+
SOP32
1785
全新原裝進口自己庫存優(yōu)勢
MIT
25+
SOP-32
65428
百分百原裝現(xiàn)貨 實單必成
98+
SOP
1958
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
MIT
24+
SSOP32
20000
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅??！
MIT
20+
SOP32
2960
誠信交易大量庫存現(xiàn)貨
MIT
25+
SOP14
18000
原廠直接發(fā)貨進口原裝

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